參數(shù)資料
型號(hào)： FDC606P
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： P-Channel 1.8V Specified PowerTrench MOSFET
中文描述： 6000 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： LEAD FREE, SUPERSOT-6
文件頁(yè)數(shù)： 2/5頁(yè)
文件大?。?/td> 154K
代理商： FDC606P
FDC606P Rev E (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
V
GS
= 0 V,
I
D
= –250
μ
A,Referenced to 25
°
C
I
D
= –250
μ
A
–12
V
Breakdown Voltage Temperature
–3
mV/
°
C
V
DS
= –10 V,
V
GS
= 8 V,
V
GS
= –8 V,
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
–1
100
–100
μ
A
nA
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
,
I
D
= –250
μ
A,Referenced to 25
°
C
V
GS
= –4.5 V,
I
D
= –6 A
V
GS
= –2.5 V,
I
D
= –5 A
V
GS
= –1.8 V,
I
D
= –4 A
V
GS
= –4.5 V, I
D
= –6 A,T
J
=125
°
C
V
GS
= –4.5 V,
V
DS
= –5 V
V
DS
= –5 V,
I
D
= –6 A
I
D
= –250
μ
A
–0.4
–0.5
2.5
–1.5
V
Gate Threshold Voltage
mV/
°
C
21
26
34
28
25
26
35
53
35
m
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
–20
A
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
1699
679
423
pF
pF
pF
V
DS
= –6 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
11
10
89
70
18
3
4.2
19
20
142
112
25
ns
ns
ns
ns
nC
nC
nC
V
DD
= –6 V,
V
GS
= –4.5 V,
I
D
= –1 A,
R
GEN
= 6
V
DS
= –6 V,
V
GS
= –4.5 V
I
D
= –6 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
–1.3
–1.2
A
V
V
GS
= 0 V,
I
S
= –1.3 A
(Note 2)
–0.6
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain
pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a. 78°C/W when mounted on a 1in
2
pad of 2oz copper on FR-4 board.
b. 156°C/W when mounted on a minimum pad.
2.
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
F
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDC606P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SMD SUPERSOT-6 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, P, SMD, SUPERSOT-6
FDC606P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
FDC606P-CUT TAPE 制造商:FAIRCHILD 功能描述:FDC606P Series 20 V 26 mOhms P-Channel 1.8V Specified PowerTrench Mosfet SSOT-6
FDC608PZ 功能描述:MOSFET -20V P-Channel 2.5V PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDC610PZ 功能描述:MOSFET -30V P-CHANNEL RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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