參數(shù)資料
型號: FDC3612
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: 100V N-Channel PowerTrench MOSFET
中文描述: 2600 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: LEAD FREE, SUPERSOT-6
文件頁數(shù): 3/5頁
文件大小: 134K
代理商: FDC3612
FDC3612 Rev B3(W)
Typical Characteristics
0
4
8
12
16
20
0
2
4
6
8
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
4.0V
5.0V
4.5V
3.5V
V
GS
= 10V
0.8
1
1.2
1.4
1.6
1.8
0
4
8
12
16
20
I
D
, DRAIN CURRENT (A)
R
D
,
D
V
GS
= 3.5V
4.0V
6.0V
4.5V
10V
5.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.2
0.6
1
1.4
1.8
2.2
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= 2.6A
V
GS
= 10V
0.05
0.08
0.11
0.14
0.17
0.2
0.23
0.26
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= 1.3A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
4
8
12
16
20
2
2.5
3
3.5
4
4.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
T
A
= 125
o
C
25
o
-55
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDC3612 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
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FDC3616N 功能描述:MOSFET 100V NCh PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDC3616N 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
FDC3616N_Q 功能描述:MOSFET 100V NCh PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube