參數(shù)資料
型號： FDB8447L
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 40V N-Channel PowerTrench MOSFET
中文描述： 15 A, 40 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： TO-263AB, 3 PIN
文件頁數(shù)： 2/6頁
文件大?。?/td> 347K
代理商： FDB8447L
F
M
FDB8447L Rev.C
www.fairchildsemi.com
2
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
BV
DSS
T
J
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= 250
μ
A, V
GS
= 0V
40
V
I
D
= 250
μ
A, referenced to 25°C
35
mV/°
C
V
DS
= 32V, V
GS
= 0V
V
GS
= ±20V, V
GS
= 0V
1
μ
A
nA
±100
On Characteristics
V
GS(th)
V
GS(th)
T
J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V
GS
= V
DS
, I
D
= 250
μ
A
1
1.9
3
V
I
D
= 250
μ
A, referenced to 25°C
-5
mV/°C
r
DS(on)
Static Drain to Source On Resistance
V
GS
= 10V, I
D
= 14A
V
GS
= 4.5V, I
D
= 11A
V
GS
= 10V, I
D
= 14A, T
J
=125°C
V
DS
= 5V, I
D
= 14A
7.4
8.7
10.8
58
8.5
11.0
12.4
m
g
FS
Forward Transconductance
S
(Note 2)
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 20V, V
GS
= 0V,
f = 1MHz
1970
250
150
1.0
2620
335
225
pF
pF
pF
f = 1MHz
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g(TOT)
Q
g(TOT)
Q
gs
Q
gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge, V
GS
= 10V
Total Gate Charge, V
GS
= 5V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
DD
= 20V, I
D
= 14A
V
GS
= 10V, R
GEN
= 6
11
6
28
4
37
20
6
7
20
12
45
10
52
28
ns
ns
ns
ns
nC
nC
nC
nC
V
DD
=20V, I
D
= 14A
V
GS
= 10V
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Notes:
1:
R
θ
JA
is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
R
θ
JC
is guaranteed by design while R
θ
JA
is determined by the user’s board design.
a. 40°C/W when mounted on a 1 in
2
pad of 2 oz copper
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0V, I
S
= 14A (Note 2)
0.8
28
24
1.2
42
36
V
ns
nC
I
F
= 14A, di/dt = 100A/
μ
s
2:
Pulse Test: Pulse Width < 30
0
μ
s, Duty cycle < 2.0%.
3:
Starting T
J
= 25°C, L = 1mH, I
AS
= 17.5A, V
DD
= 40V, V
GS
= 10V.
b. 62.5°C/W when mounted on a minimum pad.
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