參數(shù)資料
型號(hào)： FDB8443
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： JFETs
英文描述： N-Channel PowerTrench㈢ MOSFET
中文描述： 25 A, 40 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： ROHS COMPLIANT PACKAGE-3
文件頁(yè)數(shù)： 5/7頁(yè)
文件大?。?/td> 299K
代理商： FDB8443
F
FDB8443
Rev.
A
www.fairchildsemi.com
5
Figure 5. Forward Bias Safe Operating Area
NOTE:
Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
C
apability
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
Typical Characteristics
1
10
100
0.1
1
10
100
1000
LIMITED
BY PACKAGE
10us
100us
1ms
10ms
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
T
C
= 25oC
DC
0.01
0.1
1
10
100
1000
1
10
100
5000
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
500
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
40
80
120
160
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 175
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 5V
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
0
1
2
3
4
5
0
40
80
120
160
200
V
GS
= 5V
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 4V
V
GS
= 4.5V
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
3
4
V
GS
, GATE TO SOURCE VOLTAGE
(
V
)
5
6
7
8
9
10
0
20
40
60
80
r
D
,
O
(
m
Ω
)
I
D
=
80A
T
J
= 25
o
C
T
J
= 175
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
-80
-40
0
40
80
120
160
200
0.6
0.8
1.0
1.2
1.4
1.6
1.8
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
I
D
= 80A
V
GS
= 10V
N
T
J
, JUNCTION TEMPERATURE
(
o
C
)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDB8443_11 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 40V, 80A, 3.0m??
FDB8443_F085 功能描述:MOSFET 40V N-CHAN PwrTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDB8444 功能描述:MOSFET 40V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDB8444_10 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 40V, 70A, 5.5m??
FDB8444_F085 功能描述:MOSFET 40V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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