參數(shù)資料
型號： FDB8443
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel PowerTrench㈢ MOSFET
中文描述： 25 A, 40 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： ROHS COMPLIANT PACKAGE-3
文件頁數(shù)： 2/7頁
文件大?。?/td> 299K
代理商： FDB8443
F
FDB8443
Rev.
A
www.fairchildsemi.com
2
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
V
GS
Parameter
Ratings
40
±20
80
25
See Figure 4
531
188
1.25
-55 to +175
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (T
C
< 146
o
C, V
GS
= 10V)
Continuous (T
amb
= 25
o
C, V
GS
= 10V, with R
θ
JA
= 43
o
C/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power Dissipation
Derate above 25
o
C
Operating and Storage Temperature
I
D
A
E
AS
mJ
W
W/
o
C
o
C
P
D
T
J
, T
STG
R
θ
JC
R
θ
JA
R
θ
JA
Thermal Resistance Junction to Case
0.8
o
C/W
o
C/W
o
C/W
Thermal Resistance Junction to Ambient (Note 2)
Thermal Resistance Junction to Ambient TO-263, 1in
2
copper pad area
62
43
Package Marking and Ordering Information
Device Marking
FDB8443
Device
FDB8443
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
B
VDSS
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 32V,
V
GS
= 0V
V
GS
= ±20V
40
-
-
-
-
-
-
-
-
1
V
I
DSS
Zero Gate Voltage Drain Current
μ
A
T
C
= 150
o
C
250
±100
I
GSS
Gate to Source Leakage Current
nA
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 80A, V
GS
= 10V
I
D
= 80A, V
GS
= 10V,
T
J
= 175
o
C
2
-
2.8
2.3
4
V
r
DS(on)
Drain to Source On Resistance
3.0
m
Ω
-
4.2
5.5
C
iss
C
oss
C
rss
R
G
Q
g(TOT)
Q
g(TH)
Q
gs
Q
gs2
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller“ Charge
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
-
-
-
-
-
-
-
-
9310
800
510
0.9
142
17.5
36
18.8
32
-
-
-
-
pF
pF
pF
Ω
nC
nC
nC
nC
nC
V
GS
= 0.5V, f = 1MHz
V
GS
= 0 to 10V
V
GS
= 0 to 2V
V
DD
= 20V
I
D
= 35A
I
g
= 1mA
185
23
-
-
-
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參數(shù)描述
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FDB8444_10 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 40V, 70A, 5.5m??
FDB8444_F085 功能描述:MOSFET 40V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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