參數(shù)資料
型號(hào)： FDB6644
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 30V N-Channel PowerTrench MOSFET
中文描述： 50 A, 30 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： D2PAK-3
文件頁(yè)數(shù)： 2/5頁(yè)
文件大小： 80K
代理商： FDB6644
FDP6644 Rev C(W)
Electrical Characteristics
Symbol
T
A
= 25°C unless otherwise noted
Test Conditions
Parameter
Min
Typ
Max
Units
Drain-Source Avalanche Ratings
(Note 1)
W
DSS
Single Pulse Drain-Source
Avalanche Energy
I
AR
Maximum Drain-Source Avalanche
Current
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
V
DD
= 15 V,
I
D
= 25 A
240
mJ
25
A
V
GS
= 0 V, I
D
= 250
μ
A
30
V
Breakdown Voltage Temperature
I
D
= 250
μ
A, Referenced to 25
°
C
26
mV/
°
C
V
DS
= 24 V,
V
GS
= 16 V,
V
GS
= –16 V,
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
1
μ
A
NA
NA
100
–100
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
, I
D
= 250
μ
A
I
D
= 250
μ
A, Referenced to 25
°
C
1
1.5
3
V
Gate Threshold Voltage
–5
mV/
°
C
V
GS
= 10 V,
V
GS
= 4.5 V,
V
GS
= 10 V, I
D
= 25 A, T
J
=125
°
C
V
GS
= 10 V,
V
DS
= 5 V,
I
D
= 25A
I
D
= 25 A
6.4
7.3
9.3
8.5
10.5
15
m
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
V
DS
= 5 V
I
D
= 25 A
60
A
S
98
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
3068
513
196
pF
pF
pF
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
(Note 2)
12.5
8
54
14
27
9
7
22.5
16
86
26
38
ns
ns
ns
ns
nC
nC
nC
V
DD
= 15 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
V
DS
= 15 V,
V
GS
= 4.5 V
I
D
= 25 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
50
A
V
SD
V
GS
= 0 V,
I
S
= 25 A
(Note 2)
0.8
1.3
V
Notes:
1. Calculated continuous current based on maximum allowable junction temperature. Actual maximum continuous current limited by package constraints to 75A.
2. Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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參數(shù)描述
FDB6644S 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDB6670AL 功能描述:MOSFET N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDB6670AL_Q 功能描述:MOSFET N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDB6670AS 功能描述:MOSFET 30V N-Channel PT SyncFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDB6670AS_NL 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench SyncFET
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