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參數(shù)資料
| 型號： | FDB4020P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor |
| 中文描述： | 16 A, 20 V, 0.08 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | TO-263AB, 3 PIN |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 213K |
| 代理商： | FDB4020P |
F
FDP4020P Rev. A
FDP4020P/FDB4020P
P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor
General Description
This P-Channel low threshold MOSFET has been
designed for use as a linear pass element for low voltage
outputs. In addition, the part may be used as a low voltage
load switch when switching outputs on or off for power
management.The part may also be used in conjunction
with DC-DC converters requiring P-Channel.
February 1999
PRELIMINARY
Features
-16 A, -20 V. R
DS(on)
= 0.08
@ V
GS
= -4.5 V
R
DS(on)
= 0.11
@ V
GS
= -2.5 V.
Critical DC electrical parameters specified at elevated
temperature.
High density cell design for extremely low R
DS(on)
.
TO-220 and TO-263 (D2PAK) package for both
through hole and surface mount applications.
175
°
C maximum junction temperature rating.
1999 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
Parameter
FDP4020P
FDB4020P
Units
V
DSS
V
GSS
I
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
-20
±
8
-16
-48
37.5
0.25
V
V
A
- Continuous
- Pulsed
Total Power Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θ
JC
R
θ
JA
W
P
D
W/
°
C
°
C
T
J
, T
STG
-65 to +175
Thermal Resistance, Junction-to- Case
Thermal Resistance, Junction-to- Ambient
4
°
C/W
°
C/W
(Note 1)
62.5
40
Package Outlines and Ordering Information
Device Marking
FDP4020P
Device
FDP4020P
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
S
D
G
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