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參數(shù)資料
| 型號： | FDB2670 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 200V N-Channel PowerTrench MOSFET |
| 中文描述： | 19 A, 200 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | D2PAK-3 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 83K |
| 代理商： | FDB2670 |
November 2001
2001 Fairchild Semiconductor Corporation
FDP2670/FDB2670 Rev C1(W)
FDP2670/FDB2670
200V N-Channel PowerTrench
MOSFET
General Description
This
specifically for switching on the primary side in the
isolated DC/DC converter application. Any application
requiring a 200V MOSFETs with low on-resistance and
fast switching will benefit.
N-Channel
MOSFET
has
been
designed
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS
(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
19 A, 200 V.
R
DS(ON)
= 130 m
@ V
GS
= 10 V
Low gate charge (27 nC typical)
Fast switching speed
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
S
G
D
TO-220
FDP Series
D
G
S
TO-263AB
FDB Series
S
G
D
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
– Pulsed
P
D
Total Power Dissipation @ T
C
= 25
°
C
Ratings
200
±
20
19
40
93
0.63
3.2
Units
V
V
A
A
W
W
°
/C
V/ns
(Note 1)
(Note 1)
Derate above 25
°
C
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
T
J
, T
STG
Operating and Storage Junction Temperature Range
–65 to +175
°
C
Thermal Characteristics
R
θ
JC
Thermal Resistance, Junction-to-Case
R
θ
JA
Thermal Resistance, Junction-to-Ambient
1.6
62.5
°
C/W
°
C/W
Package Marking and Ordering Information
Device Marking
Device
FDB2670
FDB2670
FDP2670
FDP2670
Reel Size
13’’
Tube
Tape width
24mm
n/a
Quantity
800 units
45 units
F
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