- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375779 > FDP3672 (FAIRCHILD SEMICONDUCTOR CORP) N-Channel PowerTrench MOSFET 105V, 41A, 33mз PDF資料下載
參數(shù)資料
| 型號： | FDP3672 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET 105V, 41A, 33mз |
| 中文描述： | 5.9 A, 105 V, 0.033 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 237K |
| 代理商： | FDP3672 |
2003 Fairchild Semiconductor Corporation
September 2003
FDP3672 Rev. A3
F
FDP3672
N-Channel PowerTrench
MOSFET
105V, 41A, 33m
Features
r
DS(ON)
= 25m
(Typ.), V
GS
= 10V, I
D
= 41A
Q
g
(tot) = 28nC (Typ.), V
GS
= 10V
Low Miller Charge
Low Q
RR
Body Diode
Optimized efficiency at high frequencies
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101
Formerly developmental type 82760
Applications
DC/DC converters and Off-Line UPS
Distributed Power Architectures and VRMs
Primary Switch for 24V and 48V Systems
High Voltage Synchronous Rectifier
Direct Injection / Diesel Injection Systems
42V Automotive Load Control
Electronic Valve Train Systems
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
Symbol
V
DSS
V
GS
Parameter
Ratings
105
±
20
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 100
o
C, V
GS
= 10V)
Continuous (T
amb
= 25
o
C, V
GS
= 10V, R
θ
JA
= 62
o
C/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
I
D
41
31
5.9
A
A
A
A
Figure 4
48
135
0.9
-55 to 175
E
AS
mJ
W
W/
o
C
o
C
P
D
T
J
, T
STG
R
θ
JC
R
θ
JA
Thermal Resistance Junction to Case TO-220
Thermal Resistance Junction to Ambient TO-220 (Note 2)
1.11
62
o
C/W
o
C/W
S
G
D
TO-220AB
FDP SERIES
DRAIN
(FLANGE)
DRAIN
GATE
SOURCE
相關PDF資料 |
PDF描述 |
|---|---|
| FDP3682 | N-Channel PowerTrench MOSFET 100V, 32A, 36mз |
| FDP3682 | STEREO 200W CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER USING DIGITAL POWER PROCESSING TECHNOLOGY |
| FDB3682 | N-Channel PowerTrench MOSFET 100V, 32A, 36mз |
| FDP39N20 | DIODE ZENER SINGLE 350mW 16Vz 7.8mA-Izt 0.05 0.1uA-Ir 12 SOT-23 3K/REEL |
| FDP4020 | P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FDP3672_NL | 制造商:Fairchild 功能描述:105V/41A N-CH MOSFET |
| FDP3682 | 功能描述:MOSFET 100V 32a .36Ohm/VGS=1V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDP3682 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDP3682_Q | 功能描述:MOSFET 100V 32a .36Ohm/VGS=1V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDP3682_SB82034 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復。