參數(shù)資料
型號(hào)： FDB045AN08
廠商： Fairchild Semiconductor Corporation
英文描述： N-Channel UltraFET Trench MOSFET 75V, 80A, 4.5mз
中文描述： N溝道UltraFET溝道MOSFET 75V的，80A條，4.5mз
文件頁(yè)數(shù)： 2/11頁(yè)
文件大小： 240K
代理商： FDB045AN08
2002 Fairchild Semiconductor Corporation
FDB045AN08A0 Rev. A
F
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Off Characteristics
B
VDSS
On Characteristics
V
GS(TH)
Dynamic Characteristics
C
ISS
Input Capacitance
C
OSS
Output Capacitance
C
RSS
Reverse Transfer Capacitance
Q
g(TOT)
Total Gate Charge at 10V
Q
g(TH)
Threshold Gate Charge
Q
gs
Gate to Source Gate Charge
Q
gs2
Gate Charge Threshold to Plateau
Q
gd
Gate to Drain “Miller” Charge
Switching Characteristics
(V
GS
= 10V)
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
Drain-Source Diode Characteristics
Notes:
1:
Starting T
= 25°C, L = 0.48mH, I
AS
= 50A.
2:
Pulse Width = 100s
Device Marking
FDB045AN08A0
Device
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
FDB045AN08A0
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 60V
V
GS
= 0V
V
GS
=
±
20V
75
-
-
-
-
-
-
-
-
1
V
I
DSS
Zero Gate Voltage Drain Current
μ
A
T
C
= 150
o
C
250
±
100
I
GSS
Gate to Source Leakage Current
nA
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 80A, V
GS
= 10V
I
D
= 37A, V
GS
= 6V
I
D
= 80A, V
GS
= 10V,
T
J
= 175
o
C
2
-
-
-
4
V
r
DS(ON)
Drain to Source On Resistance
0.0039 0.0045
0.0056 0.0084
-
0.008
0.011
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
-
-
6600
1000
240
92
11
27
16
21
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
V
GS
= 0V to 10V
V
GS
= 0V to 2V
V
DD
= 40V
I
D
= 80A
I
g
= 1.0mA
138
17
-
-
-
-
-
-
-
V
DD
= 40V, I
D
= 80A
V
GS
= 10V, R
GS
= 3.3
-
-
-
-
-
-
-
160
-
-
-
-
128
ns
ns
ns
ns
ns
ns
18
88
40
45
-
V
SD
Source to Drain Diode Voltage
I
SD
= 80A
I
SD
= 40A
I
SD
= 75A, dI
SD
/dt = 100A/
μ
s
I
SD
= 75A, dI
SD
/dt = 100A/
μ
s
-
-
-
-
-
-
-
-
1.25
1.0
53
54
V
V
ns
nC
t
rr
Q
RR
Reverse Recovery Time
Reverse Recovered Charge
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