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參數(shù)資料
| 型號： | FCI7N60 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 600V N-Channel MOSFET |
| 中文描述： | 7 A, 600 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | I2PAK-3 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 951K |
| 代理商： | FCI7N60 |
4
www.fairchildsemi.com
FCI7N60 Rev. A1
F
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 10. Transient Thermal Response Curve
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
* Notes :
1. V
GS
= 0 V
2. I
D
= 250
μ
A
B
D
,
D
T
J
, Junction Temperature [
°
C]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
* Notes :
1. V
GS
= 10 V
2. I
D
= 3.5 A
R
D
,
D
T
J
, Junction Temperature [
°
C]
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10
2
Operation in This Area
is Limited by R
DS(on)
DC
10 ms
1 ms
100 us
* Notes :
1. T
C
= 25
°
C
2. T
J
= 150
°
C
3. Single Pulse
I
D
,
V
DS
, Drain-Source Voltage [V]
25
50
75
100
125
150
0.0
2.5
5.0
7.5
10.0
I
D
,
T
C
, Case Temperature [
°
C]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
* Notes :
1. Z
θ
JC
(t) = 1.5
°
C/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
θ
JC
(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
Z
θ
J
(
t
1
, Square W ave Pulse Duration [sec]
t
1
P
DM
t
2
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