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參數(shù)資料
| 型號： | FCD5N60TM |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 600V N-Channel MOSFET |
| 中文描述： | 4.6 A, 600 V, 0.95 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 858K |
| 代理商： | FCD5N60TM |
4
www.fairchildsemi.com
FCD5N60/FCU5N60 Rev. A0
F
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. Transient Thermal Response Curve
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
* Notes :
1. V
GS
= 0 V
2. I
D
= 250
μ
A
B
D
,
D
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
* Notes :
1. V
GS
= 10V
2. I
D
= 2.3A
R
D
,
D
T
J
, Junction Temperature [
o
C]
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10
2
10
μ
s
100 ms
Operation in This Area
is Limited by R
DS(on)
DC
10 ms
1 ms
100
μ
s
* Notes :
1. T
C
= 25
2. T
J
= 150
3. Single Pulse
o
C
o
C
I
D
,
V
DS
, Drain-Source Voltage [V]
25
50
75
100
125
150
0
1
2
3
4
5
I
D
,
T
C
, Case Temperature [
o
C]
1 0
- 5
1 0
- 4
1 0
- 3
1 0
- 2
1 0
- 1
1 0
0
1 0
1
1 0
- 2
1 0
- 1
1 0
0
* N o t e s :
1 . Z
2 . D u t y F a c t o r , D = t
1
/ t
2
3 . T
θ
J C
( t ) = 2 . 3
o
C / W
M a x .
J M
- T
C
= P
D M
* Z
θ
J C
( t )
s i n g l e p u ls e
D = 0 . 5
0 . 0 2
0 . 2
0 . 0 5
0 . 1
0 . 0 1
Z
θ
J
(
t
1
, S q u a r e W
a v e P u ls e D u r a t io n [ s e c ]
t
1
P
DM
t
2
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