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參數(shù)資料
| 型號： | FCU5N60 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 600V N-Channel MOSFET |
| 中文描述： | 4.6 A, 600 V, 0.95 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | IPAK-3 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 858K |
| 代理商： | FCU5N60 |
2006 Fairchild Semiconductor Corporation
FCD5N60/FCU5N60 Rev. A0
1
www.fairchildsemi.com
F
SuperFET
TM
July 2006
FCD5N60 / FCU5N60
600V N-Channel MOSFET
Features
650V @T
J
= 150°C
Typ. Rds(on)=0.81
Ultra low gate charge (typ. Qg=16nC)
Low effective output capacitance (typ. Coss.eff=32pF)
100% avalanche tested
Description
SuperFET
TM
is, Farichild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
D-PAK
FCD Series
G
S
D
G
S
D
I-PAK
FCU Series
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
FCD5N60 / FCU5N60
Unit
V
DSS
I
D
Drain-Source Voltage
600
V
Drain Current
- Continuous (T
C
= 25
°
C)
- Continuous (T
C
= 100
°
C)
- Pulsed
4.6
2.9
A
A
I
DM
Drain Current
(Note 1)
13.8
A
V
GSS
E
AS
I
AR
E
AR
dv/dt
Gate-Source voltage
±
30
V
Single Pulsed Avalanche Energy
(Note 2)
2.9
mJ
Avalanche Current
(Note 1)
4.6
A
Repetitive Avalanche Energy
(Note 1)
5.4
mJ
Peak Diode Recovery dv/dt
(Note 3)
20
V/ns
P
D
Power Dissipation
(T
C
= 25
°
C)
- Derate above 25
°
C
54
0.43
W
W/
°
C
T
J,
T
STG
T
L
Operating and Storage Temperature Range
-55 to +150
°
C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
°
C
Thermal Characteristics
Symbol
Parameter
FCD5N60/FCU5N60
Unit
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to-Case
2.3
°
C/W
Thermal Resistance, Junction-to-Ambient
83
°
C/W
*Drain current limited by maximum junction temperature
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FCU5N60TU | 功能描述:MOSFET 600V N-Channel MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FCU-7 | 功能描述:保險絲 FUSETRON DUAL-ELEMT RoHS:否 制造商:Littelfuse 產(chǎn)品:Surface Mount Fuses 電流額定值:0.5 A 電壓額定值:600 V 保險絲類型:Fast Acting 保險絲大小/組:Nano 尺寸:12.1 mm L x 4.5 mm W 安裝風(fēng)格: 端接類型:SMD/SMT 系列:485 |
| FCU7N60 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V N-Channel MOSFET |
| FCU7N60TU | 功能描述:MOSFET 600V N-Channel MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FCU900N60Z | 功能描述:MOSFET Low Power Two-Input Logic Gate TinyLogic RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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