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參數(shù)資料
| 型號： | FCA16N60 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 600V N-Channel MOSFET |
| 中文描述： | 16 A, 600 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-3P, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 905K |
| 代理商： | FCA16N60 |
3
www.fairchildsemi.com
FCA16N60 REV. A
F
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage
Variation vs. Source Current
and Temperatue
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
10
-1
10
0
10
1
10
0
10
1
10
2
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Notes :
1. 250
μ
S Pulse Test
2. T
C
= 25
°
C
I
D
,
V
DS
, Drain-Source Voltage [V]
2
4
6
8
10
10
0
10
1
10
2
Note
1. V
DS
= 40V
2. 250
μ
s Pulse Test
-55
°
C
150
°
C
25
°
C
I
D
V
GS
, Gate-Source Voltage [V]
0
5
10
15
20
25
30
35
40
45
50
0.0
0.1
0.2
0.3
0.4
0.5
0.6
V
GS
= 20V
V
GS
= 10V
Note : T
J
= 25
°
C
R
D
D
I
D
, Drain Current [A]
0.2
0.4
0.6
V
SD
, Source-Drain Voltage [V]
0.8
1.0
1.2
1.4
1.6
10
0
10
1
10
2
25
°
C
150
°
C
Notes :
1. V
GS
= 0V
2. 250
μ
s Pulse Test
I
D
10
-1
10
0
10
1
0
1000
2000
3000
4000
5000
6000
7000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Notes :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
V
DS
, Drain-Source Voltage [V]
0
10
20
30
40
50
60
0
2
4
6
8
10
12
V
DS
= 250V
V
DS
= 480V
V
DS
= 100V
Note : I
D
= 16A
V
G
,
Q
G
, Total Gate Charge [nC]
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