- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375760 > FCB11N60 (FAIRCHILD SEMICONDUCTOR CORP) 600V N-Channel MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | FCB11N60 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 600V N-Channel MOSFET |
| 中文描述： | 11 A, 600 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 |
| 封裝： | D2PAK-3 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 582K |
| 代理商： | FCB11N60 |
2005 Fairchild Semiconductor Corporation
FCB11N60 Rev. A
1
www.fairchildsemi.com
F
SuperF E T
TM
FCB11N60
600V N-Channel MOSFET
Features
650V @T
J
= 150°C
Typ. R
DS(on)
= 0.32
Ultra low gate charge (typ. Q
g
= 40nC)
Low effective output capacitance (typ. C
oss
.eff = 95pF)
100% avalanche tested
Description
SuperFET
TM
is, Farichild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize con-
duction loss, provide superior switching performance, and with-
stand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system min-
iaturization and higher efficiency.
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
! "
!
!
S
!
"
"
"
D
G
G
S
D
Symbol
Parameter
FCB11N60
Unit
V
DSS
I
D
Drain-Source Voltage
600
V
Drain Current
- Continuous (T
C
= 25
°
C)
- Continuous (T
C
= 100
°
C)
- Pulsed
11
7
A
A
I
DM
Drain Current
(Note 1)
33
A
V
GSS
E
AS
I
AR
E
AR
dv/dt
Gate-Source voltage
±
30
V
Single Pulsed Avalanche Energy
(Note 2)
340
mJ
Avalanche Current
(Note 1)
11
A
Repetitive Avalanche Energy
(Note 1)
12.5
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation
(T
C
= 25
°
C)
- Derate above 25
°
C
125
1.0
W
W/
°
C
°
C
T
J,
T
STG
T
L
Operating and Storage Temperature Range
-55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
°
C
Symbol
Parameter
FCB11N60
Unit
R
θ
JC
R
θ
JA
*
R
θ
JA
Thermal Resistance, Junction-to-Case
1.0
°
C/W
°
C/W
°
C/W
Thermal Resistance, Junction-to-Ambient*
40
Thermal Resistance, Junction-to-Ambient
62.5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FCB20N60 | CAP 0.039UF 50V 5% X7R AXIAL TR-14 |
| FCBS0550 | Smart Power Module (SPM) |
| FCBS0650 | Smart Power Module (SPM) |
| FCD4B14 | Thermal Fingerprint Sensor with 0.4 mm x 14 mm Sensing Area and Digital Output |
| FCD4B14CC | Thermal Fingerprint Sensor with 0.4 mm x 14 mm Sensing Area and Digital Output |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FCB11N60_05 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V N-Channel MOSFET |
| FCB11N60F | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V N-Channel MOSFET |
| FCB11N60FTM | 功能描述:MOSFET 600V N-Channel MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FCB11N60TM | 功能描述:MOSFET HIGH_POWER RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FCB13-S10-C20 | 制造商:Panduit Corp 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。