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參數(shù)資料
| 型號(hào)： | FBAT54CDW |
| 廠商： | 江蘇長(zhǎng)電科技股份有限公司 |
| 英文描述： | SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS |
| 中文描述： | 表面貼裝肖特基二極管陣列 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 185K |
| 代理商： | FBAT54CDW |
WBFBP-06C
(2×2×0.5)
unit: mm
1
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-06C Plastic-Encapsulate Diodes
FBAT54CDW
SURFACE MOUNT
SCHOTTKY BARRIER DIODE ARRAYS
DESCRIPTION
Silicon epitaxial planar
PN Junction Guard Ring for Schottky Diode
FEATURES
Low Forward Voltage Drop
z
z
APPLICATION
Ultra high speed switching, rectifiers
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
Fast Switching SCHOTTKY DIODE
Maximum Ratings @T
A
=25
℃
Parameter
Symbol
Limits
Unit
Peak
Repetitive reverse voltage
DC Blocking Voltage
Average Rectified Output Current
Power Dissipation
V
RM
V
R
I
O
P
D
30
V
100
150
mA
mW
Junction temperature
Storage temperature range
ELECTRICAL CHARACTERISTICS
T
J
T
STG
（
Tamb=25
125
℃
℃
-65-125
℃
unless otherwise specified
）
Parameter
Symbol
Test conditions
MIN
MAX
UNIT
Reverse breakdown voltage
V
(BR)
I
R
= 100
μ
A
30
V
Reverse voltage leakage current
I
R
V
R
=25V
2
u
A
Forward voltage
V
F
I
F
=0.1mA
I
F
=1mA
I
F
=10mA
I
F
=30mA
I
F
=100mA
240
320
400
500
1000
mV
Total capacitance
C
T
V
R
=1V,f=1MHz
10
pF
Reverse recovery time
t
r r
I
F
=10mA, I
R
=10mA~1mA
R
L
=100
Ω
5
nS
FBAT54CDW
Marking:KL7
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FBAT54SDW | 制造商:JIANGSU 制造商全稱:Jiangsu Changjiang Electronics Technology Co., Ltd 功能描述:SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS |
| FBAT54TW | 制造商:JIANGSU 制造商全稱:Jiangsu Changjiang Electronics Technology Co., Ltd 功能描述:SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS |
| FBAV19 | 制造商:FCI 制造商全稱:First Components International 功能描述:500 mW EPITAXIAL PLANAR DIODES |
| FBAV20 | 制造商:FCI 制造商全稱:First Components International 功能描述:500 mW EPITAXIAL PLANAR DIODES |
| FBAV21 | 制造商:FCI 制造商全稱:First Components International 功能描述:500 mW EPITAXIAL PLANAR DIODES |
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