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參數(shù)資料
| 型號(hào)： | FBAT54TW |
| 廠商： | 江蘇長電科技股份有限公司 |
| 英文描述： | SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS |
| 中文描述： | 表面貼裝肖特基二極管陣列 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 190K |
| 代理商： | FBAT54TW |
WBFBP-06C
(2×2×0.5)
unit: mm
1
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-06C Plastic-Encapsulate Diodes
FBAT54TW
SURFACE MOUNT
SCHOTTKY BARRIER DIODE ARRAYS
DESCRIPTION
Silicon epitaxial planar
PN Junction Guard Ring for Schottky Diode
FEATURES
Low Forward Voltage Drop
Fast Switching
APPLICATION
Ultra high speed switching, rectifiers
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
F B
AT54TW
Marking:KLA
z
z
Maximum Ratings @T
A
=25
℃
Parameter
Symbol
Limits
Unit
Peak
Repetitive reverse voltage
DC Blocking Voltage
Average Rectified Output Current
Power Dissipation
V
RM
V
R
I
O
P
D
30
V
100
150
mA
mW
Junction temperature
Storage temperature range
ELECTRICAL CHARACTERISTICS
T
J
T
STG
（
Tamb=25
125
℃
℃
-65-125
℃
unless otherwise specified
）
Parameter
Symbol
Test conditions
MIN
MAX
UNIT
Reverse breakdown voltage
V
(BR)
I
R
= 100
μ
A
30
V
Reverse voltage leakage current
I
R
V
R
=25V
2
u
A
Forward voltage
V
F
I
F
=0.1mA
I
F
=1mA
I
F
=10mA
I
F
=30mA
I
F
=100mA
240
320
400
500
1000
mV
Total capacitance
C
T
V
R
=1V,f=1MHz
10
pF
Reverse recovery time
t
r r
I
F
=10mA, I
R
=10mA~1mA
R
L
=100
Ω
5
nS
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