參數(shù)資料
型號: FB15R06KL4B1
廠商: INFINEON TECHNOLOGIES AG
元件分類: IGBT 晶體管
英文描述: Variable Capacitance Diode for Digital audio; Ratings VR (V): 15; Characteristics n: 3.25 to 3.70; Characteristics rs (ohm) max: 0.75; Characteristics C (pF) max: C0.5 = 7.20 to 7.80 C2.5 = 2.05 to 2.35; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6
中文描述: 19 A, 600 V, N-CHANNEL IGBT
封裝: MODULE-26
文件頁數(shù): 4/13頁
文件大?。?/td> 293K
代理商: FB15R06KL4B1
Technische Information / technical information
IGBT-Module
IGBT-Modules
FB15R06KL4B1
Vorlufig
preliminary
Thermische Eigenschaften / thermal properties
min.
typ.
max.
Innerer Wrmewiderstand
thermal resistance, junction to heatsink
Gleichr. Diode/ rectif. diode
λ
Paste
=1W/m*K
R
thJH
-
1,1
-
K/W
Trans. Wechselr./ trans. inverter
λ
grease
=1W/m*K
-
2,4
-
K/W
Diode Wechselr./ diode inverter
-
4,0
-
K/W
Trans. Bremse/ trans. brake
-
2,4
-
K/W
Diode Bremse/ diode brake
-
4,3
-
K/W
Innerer Wrmewiderstand
thermal resistance, junction to case
Gleichr. Diode/ rectif. diode
Trans. Wechselr./ trans. inverter
Diode Wechselr./ diode inverter
Trans. Bremse/ trans. brake
Diode Bremse/ diode brake
Gleichr. Diode/ rectif. diode
Trans. Wechselr./ trans. inverter
Diode Wechselr./ diode inverter
Trans. Bremse/ trans. brake
Diode Bremse/ diode brake
R
thJC
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1
2
K/W
K/W
K/W
K/W
K/W
K/W
K/W
K/W
K/W
K/W
2,9
2
3,1
-
-
-
-
-
übergangs-Wrmewiderstand
thermal resistance, case to heatsink
λ
Paste
=1W/m*K
λ
grease
=1W/m*K
R
thCH
0,2
0,6
1,4
0,6
1,5
Hchstzulssige Sperrschichttemperatur
maximum junction temperature
T
vj
-
-
150
°C
Betriebstemperatur
operation temperature
T
op
-40
-
125
°C
Lagertemperatur
storage temperature
T
stg
-40
-
125
°C
Mechanische Eigenschaften / mechanical properties
Innere Isolation
internal insulation
Al
2
O
3
CTI
comperative tracking index
225
Anprekraft f. mech. Befestigung pro Feder
mounting force per clamp
Gewicht
weight
Kontakt - Kühlkrper
terminal to heatsink
G
36
g
Kriechstrecke
creepage distance
13,5
mm
Luftstrecke
clearance distance
12
mm
Kriechstrecke
creepage distance
7,5
mm
Luftstrecke
clearance distance
7,5
mm
F
N
40...80
Terminal - Terminal
terminal to terminal
4(12)
相關(guān)PDF資料
PDF描述
FB180SA10 Power MOSFET
FB250-C1000G FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS
FB125-C1000G FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS
FB380-C1000G FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS
FB40 FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FB15R06VE3ENG 功能描述:IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FB15R06W1E3 功能描述:IGBT 模塊 IGBT-MODULE RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FB15R06W1E3BOMA1 制造商:Infineon Technologies AG 功能描述:
FB15R06W1E3ENG 制造商:Infineon Technologies AG 功能描述:
FB160 功能描述:DIODE TVS 160VR 2200W FOLDBACK RoHS:否 類別:過電壓,電流,溫度裝置 >> TVS - 二極管 系列:Foldbak 標(biāo)準(zhǔn)包裝:2,000 系列:TransZorb® 電壓 - 反向隔離(標(biāo)準(zhǔn)值):8V 電壓 - 擊穿:8.89V 功率(瓦特):500W 電極標(biāo)記:單向 安裝類型:通孔 封裝/外殼:DO-204AC,DO-15,軸向 供應(yīng)商設(shè)備封裝:DO-204AC(DO-15) 包裝:帶盒(TB)