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參數(shù)資料
| 型號： | FALL2003 |
| 英文描述： | High Efficiency Diodes (HEDs); Surface Mount Type: Y; Package: M-FLAT; Number Of Pins: 2; Application Scope: Switching mode power supply; Internal Connection: Single; T RR (ns): (max 35); Repetitive Peak Reverse Voltage V_RRM Max (V): (max 3); I O (A): (max 200) |
| 中文描述： | 產(chǎn)品選型指南 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大小： | 1551K |
| 代理商： | FALL2003 |
WJ Communications RF Semiconductors 401 River Oaks Parkway San Jose, California 95134-1916 1-800-951-4401
www.wj.com
FETs
MIXERS (continued)
High Intercept
FET Mixers
Frequency Range (MHz)
RF LO IF
LO Power
(dBm)
Input P1dB
(dBm)
Input IP3
(dBm)
Conversion
Loss (dB)
Isolation
L-R (dB)
Package
Style
HMJ1
HMJ2
HMJ4
HMJ5
HMJ7
HMJ8
800-1000
1850-1990
1700-1880
40-1000
1000-2000
2200-2300
700-980
1700-1940
1550-1830
30-500
1000-2000
2060-2160
20-100
50-150
50-150
5-250
10-100
50-150
17
17
17
17
21
18
23
23
23
23
23
23
39
37
36
35
34
37
7.7
9.0
8.8
7.5
8.5
8.0
29
32
34
28
24
27
J-PAK-18
J-PAK-18
J-PAK-18
J-PAK-22
J-PAK-22
J-PAK-18
Diode Mixers
Frequency Range (MHz)
RF LO IF
LO Power
(dBm)
Input P1dB
(dBm)
Input IP3
(dBm)
Conversion
Loss (dB)
Isolation
L-R (dB)
Package
Style
SME1400B-10
SME1400B-13
SME1400B-17
SME1900-17
1-2200
1-2200
1-2200
1600-2400
1-2200
1-2200
1-2200
1400-2390
1-2000
1-2000
1-2000
10-250
10
13
17
17
6
9
13
14
19
22
27
29
6.2
6.5
6.5
7.4
35
30
30
26
S-PAK-3
S-PAK-3
S-PAK-3
S-PAK-3
WJ’s discrete FET’s meet today’s demand for wireless receiver and transmitter applications. WJ’s FET’s deliver exceptional performance and
high reliability and are the basic building blocks within WJ’s amplifier products. WJ’s high dynamic range FETs are packaged in low-cost
surface mount packages for customized design applications.
MESFETs
Frequency Range
(MHz)
Idss
(mA)
GMO
(mS)
Vp
(V)
Gmsg
(dB)
Gss
(dB)
P1dB
(dBm)
OIP3
(dBm)
NF
(dB)
Package
Style
FH1
FH101
FP101
50-3000
50-3000
100-3000
140
140
340
120
120
120
-1.5
-1.5
-2.3
23
23
20.5
19
19
13.5
21
18
25
42
36
39
2.0
2.0
2.0
SOT-89
SOT-89
SOT-89
WJ’s three Heterostructure-FET devices; the FP1189, FP2189 and FP31QF offer OEM’s high-efficiency, high-power and high-quality
building blocks for wireless infrastructure applications. These reliable HFETs enable low-cost solutions achieving 0.25-2 Watts of P1dB
power. The low-cost, SOT-89 surface mount and 28-PIN QFN packages are optimized to offer excellent thermal efficiency with at least
100 year MTTF values calculated at 85°C operating case temperatures. They are ideal for a multitude of driver amplifier and power
amplifier applications in wireless transmission systems.
HFETs
Frequency Range
(MHz)
Idss
(mA)
GMO
(mS)
Vp
(V)
Gmsg
(dBm)
Gss
(dB)
P1dB
(dBm)
OIP3
(dBm)
NF
(dB)
Package
Style
FP1189
FP2189
FP31QF
NEW
50-4000
50-4000
50-4000
290
615
1170
155
280
590
-2.1
-2.1
-2.0
24
24
24
19
18
18
27
30
34
40
44
46
2.7
4.5
3.5
SOT-89
SOT-89
28-PIN QFN
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