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| 型號(hào)： | FALL2003 |
| 英文描述： | High Efficiency Diodes (HEDs); Surface Mount Type: Y; Package: M-FLAT; Number Of Pins: 2; Application Scope: Switching mode power supply; Internal Connection: Single; T RR (ns): (max 35); Repetitive Peak Reverse Voltage V_RRM Max (V): (max 3); I O (A): (max 200) |
| 中文描述： | 產(chǎn)品選型指南 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大小： | 1551K |
| 代理商： | FALL2003 |
WJ Communications RF Semiconductors 401 River Oaks Parkway San Jose, California 95134-1916 1-800-951-4401
www.wj.com
WJ’s advanced technology mixers feature high input IP3 performance for broadband communication applications. WJ’s portfolio of
mixers spans a broad range of technologies from FETs and MMIC mixers to diode mixers. Each family offers an exceptional value
of price and performance. WJ offers standard designs for mobile telephony infrastructure (2G and 3G applications), CATV and fixed
broadband wireless markets.
The MH203 and MH205 MMIC mixers expand WJ’s technology into the cellular frequency applications. The MH series mixers are
available in different models for various configurations, consisting of low-side and high-side LO configurations. The MH line provides
a low-cost and high linearity solution for the cellular applications.
These MMIC mixers utilize Quad-MOSFETS and include integral RF and LO baluns within a 3 x 3 mm, six-pin, DFN, surface mount
package. An external IF balun can be used to accommodate single-ended operation if desired. Typical applications include frequency
up/down conversion, modulation and demodulation for receivers and transmitters used in cellular-band 3G mobile infrastructures.
MIXERS
PCS/UMTS
MMIC Mixers
Frequency Range (MHz)
RF LO IF
LO Power
(dBm)
Input P1dB
(dBm)
Input IP3
(dBm)
Conversion
Loss (dB)
L-I Isolation
(dB)
Package
Style
MH1
MH101
MH102
1700-2000
1900-2200
1900-2200
1450-1950
1700-2150
1550-2050
50-250
50-200
150-350
17
17
17
18
16
16
30
30
32
8.8
9.0
9.0
38
37
35
SOIC-8
SOIC-8
SOIC-8
Cell Band
MMIC Mixers
Frequency Range (MHz)
RF LO IF
LO Power
(dBm)
Input P1dB
(dBm)
Input IP3
(dBm)
Conversion
Loss (dB)
L-I Isolation
(dB)
Package
Style
MH203
NEW
MH205
NEW
800-960
800-915
1000-1310
700-845
200-350
70-120
17
17
16
16
30
32
8.5
8.5
50
50
SOIC-8
SOIC-8
Quad
FET Mixers
Frequency Range (MHz)
RF LO IF
LO Power
(dBm)
Input P1dB
(dBm)
Input IP3
(dBm)
Conversion
Loss (dB)
L-I Isolation
(dB)
Package
Style
MH302
NEW
MH303
NEW
1800-2000
820-920
1540-1740
720-900
200-300
20-100
13
13
18
17.5
27
28
7.5
7.5
32
44
6-PIN DFN
6-PIN DFN
VARIABLE GAIN AMPS
The VG series are high dynamic-range variable gain amplifiers for the cellular, PCS and UMTS bands. The high output compression
and output intercept points of the amplifiers are maintained over the entire attenuation range, making them ideal for use in transmitter
and receiver AGC circuits or as a variable gain stage following an LNA in high dynamic range receiver front ends. Superior thermal
design allows these devices to have minimum MTTF ratings of at least 100 years at a mounting temperature of +85
°
C.
Variable Gain
Amplifiers
Frequency
(MHz)
Attenuation
Range (dB)
Gain
(dB)
OIP3
(dBm)
P1dB
(dBm)
Noise
Figure (dB)
Currrent
(mA)
Control
Voltage (V)
Bias
(V)
Package
Style
VG024
NEW
VG101
NEW
750-1000
VG111
NEW
1800-2200
50-2200
18
29
30
16.6
16.0
14.0
40
40
38
21
21
21
5.5
4.1
4.1
150
150
150
0-4.5
0-4.5
0-4.5
5
5
5
SOIC-8 (B)
28-PIN QFN
28-PIN QFN
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