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參數(shù)資料
| 型號： | F5001 |
| 廠商： | Polyfet RF Devices |
| 英文描述： | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| 中文描述： | 專利金金屬化硅柵增強(qiáng)型射頻功率VDMOS晶體管 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 37K |
| 代理商： | F5001 |
POUT VS PIN GRAPH
F5001
F5001 CAPACITANCE VS VDS
VDS IN VOLTS
0
2
4
6
8
10
12
0
5
10
15
20
25
30
Crss
Coss
F5001 IV CURVE
Vds in Volts
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0
2
4
6
8
10
12
14
16
18
20
Vg = 2V
Vg = 4V
Vg = 6V
Vg = 8V
Vg = 10V
Vg = 12V
F5001 DIE GM & ID vs VG
Vgs in Volts
0.001
0.01
0.1
1
0
2
4
6
8
10
12
14
16
18
20
Gm
Id
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
CAPACITANCE VS VOLTAGE
IV CURVE
ID AND GM VS VGS
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
REVISION
8/1/97
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PDF描述 |
|---|---|
| F5033 | 30V N-Channel PowerTrench MOSFET |
| F50N06LE | 50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs |
| F5CP | 2.5 x 2.0mm package F5CP / F6CP Dimensions & Pin Configuration |
| F5D1 | AlGaAs INFRARED EMITTING DIODE |
| F5D2 | AlGaAs INFRARED EMITTING DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| F50010 NA113 | 制造商:Alpha Wire Company 功能描述:HEAT SHRINK TUBE 10 NAT 25X2' |
| F5001-08 | 制造商:KAYNAR (ALCOA) 功能描述: |
| F50010-NA113 | 制造商:Alpha Wire 功能描述: |
| F500-12 | 制造商:Cosel Usa Inc 功能描述:Optional Accessories, OP Series |
| F50012 NA113 | 制造商:Alpha Wire Company 功能描述:SLEEVE, HEATSHRINK 260 DEG 3.8 I/D 25X2FT 制造商:Alpha Wire Company 功能描述:HEAT SHRINK TUBE 12 NAT 25X2' |
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