參數(shù)資料
型號(hào): F49L800BA-90T
廠商: ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
元件分類: DRAM
英文描述: 8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory
中文描述: 512K X 16 FLASH 3V PROM, 90 ns, PDSO48
封裝: 12 X 20 MM, TSOP1-48
文件頁(yè)數(shù): 23/47頁(yè)
文件大?。?/td> 435K
代理商: F49L800BA-90T
ES MT
F49L800UA/F49L800BA
Elite Semiconductor Memory Technology Inc.
Publication Date : May. 2007
Revision: 1.2 23/47
Table 12.
CE
Controlled Program/Erase Operations(T
A
= 0C to 70C, V
CC
=2.7V~3.6V)
-70
-90
Symbol
Description
Min.
Max.
Min.
Max.
Unit
t
WC
Write Cycle Time (Note 1)
70
90
ns
t
AS
Address Setup Time
0
0
ns
t
AH
Address Hold Time
45
45
ns
t
DS
Data Setup Time
35
35
ns
t
DH
Data Hold Time
0
0
ns
t
OES
Output Enable Setup Time
0
0
ns
t
GHEL
Read Recovery Time Before Write
0
0
ns
t
WS
WE
Setup Time
0
0
ns
t
WH
WE
Hold Time
0
0
ns
t
CP
CE
Pulse Width
35
35
ns
t
CPH
CE
Pulse Width High
30
30
ns
t
WHWH1
Programming Operation(note2)
9(typ.)
9(typ.)
us
t
WHWH2
Sector Erase Operation (note2)
0.7(typ.)
0.7(typ.)
sec
Notes :
1. Not 100% tested.
2. See the "Erase and Programming Performance" section for more information.
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