參數(shù)資料
型號(hào): F49L800BA-90T
廠商: ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
元件分類: DRAM
英文描述: 8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory
中文描述: 512K X 16 FLASH 3V PROM, 90 ns, PDSO48
封裝: 12 X 20 MM, TSOP1-48
文件頁(yè)數(shù): 21/47頁(yè)
文件大小: 435K
代理商: F49L800BA-90T
ES MT
10.1 Read Operation
F49L800UA/F49L800BA
Elite Semiconductor Memory Technology Inc.
Publication Date : May. 2007
Revision: 1.2 21/47
TA = 0C to 70C, V
CC
= 2.7V~3.6V
Table 10. Read Operations
-70
-90
Symbol
Description
Conditions
Min.
70
Max.
Min.
90
Max.
Unit
t
RC
Read Cycle Time (Note 1)
ns
t
ACC
Address to Output Delay
CE
=
OE
= V
IL
70
90
ns
t
CE
CE
to Output Delay
OE
= V
IL
70
90
ns
t
OE
OE
to Output Delay
CE
= V
IL
30
35
ns
t
DF
OE
High to Output Float
(Note1)
CE
= V
IL
25
30
ns
Output Enable
Read
0
0
ns
t
OEH
Hold Time
Toggle and
Data Polling
10
10
ns
t
OH
Address to Output hold
CE
=
OE
= V
IL
0
0
ns
Notes :
1. Not 100% tested.
2. t
DF
is defined as the time at which the output achieves the open circuit condition and data is no longer
driven.
Figure 5. Read Timing Waveform
t
RC
Addresses Stable
Output Valid
Address
High- Z
CE
W E
0V
RY/BY
RESET
OE
Outputs
High- Z
t
AC C
t
O E H
t
O E
t
O H
t
D F
t
CE
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