參數(shù)資料
型號(hào): F49L160UA
廠商: Elite Semiconductor Memory Technology Inc.
英文描述: 16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
中文描述: 16兆位(2米x 8/1M × 16)3V時(shí)僅閃存的CMOS
文件頁數(shù): 26/51頁
文件大小: 454K
代理商: F49L160UA
ES MT
10.2 Program/Erase Operation
Table 15.
WE
Controlled Program/Erase Operations(T
A
= 0C to 70C, V
CC
= 2.7V~3.6V)
F49L160UA/F49L160BA
Elite Semiconductor Memory Technology Inc.
Publication Date : Dec. 2006
Revision: 1.3 26/51
-70
-90
Symbol
Description
Min.
Max.
Min.
Max.
Unit
t
WC
Write Cycle Time (Note 1)
70
90
ns
t
AS
Address Setup Time
0
0
ns
t
AH
Address Hold Time
45
45
ns
t
DS
Data Setup Time
35
45
ns
t
DH
Data Hold Time
0
0
ns
t
OES
Output Enable Setup Time
0
0
ns
t
GHWL
Read Recovery Time Before
Write (
OE
High to
WE
l
ow)
0
0
ns
t
CS
CE
Setup Time
0
0
ns
t
CH
CE
Hold Time
0
0
ns
t
WP
Write Pulse Width
35
35
ns
t
WPH
Write Pulse Width High
30
30
ns
Byte
9(typ.)
9(typ.)
t
WHWH1
Programming Operation
(Note 2)
Word
11(typ.)
11(typ.)
us
t
WHWH2
Sector Erase Operation (Note 2)
0.7(typ.)
0.7(typ.)
sec
t
VCS
V
CC
Setup Time (Note 1)
50
50
us
t
RB
Recovery Time from RY/
BY
0
0
ns
t
busy
Program/Erase Valid to RY/
BY
Delay
90
90
ns
Notes :
1. Not 100% tested.
2. See the "Erase and Programming Performance" section for more information.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
F49L160UA_08 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
F49L160UA_1 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
F49L160UA-70T 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
F49L160UA-70TG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
F49L160UA-90T 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory