參數(shù)資料
型號: F49L160UA
廠商: Elite Semiconductor Memory Technology Inc.
英文描述: 16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory
中文描述: 16兆位(2米x 8/1M × 16)3V時(shí)僅閃存的CMOS
文件頁數(shù): 24/51頁
文件大?。?/td> 454K
代理商: F49L160UA
ES MT
10. AC CHARACTERISTICS
TEST CONDITIONS
F49L160UA/F49L160BA
Elite Semiconductor Memory Technology Inc.
Publication Date : Dec. 2006
Revision: 1.3 24/51
Figure 3. Test Setup
Figure 4. Input Waveforms and Measurement Levels
Input
3.0V
0V
1.5V
Output
1.5V
Test Points
A C TE S TIN G : Input s a r e d ri ven at 3. 0 V f o r a l o g i c " 1 " a nd 0 V f o r a l og i c " 0 "
Inp ut p ul s e r i se a nd f al l ti m es a re < 5 ns .
6.2K
DIODES = IN3064
OR EQUIVALENT
+3.3V
2.7K
CL = 100pF Including jig capacitance
CL = 30pF for F49L800U/BA
CL
DEVICE UNDER
TEST
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