參數(shù)資料
型號(hào): F2212
廠商: Polyfet RF Devices
英文描述: PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
中文描述: 專利金金屬化硅柵增強(qiáng)型射頻功率VDMOS晶體管
文件頁(yè)數(shù): 2/2頁(yè)
文件大?。?/td> 35K
代理商: F2212
POUT VS PIN GRAPH
F2212
F2C 4 DIE CAPACITANCE
VDS IN VOLTS
1
10
100
0
5
10
15
20
25
30
Crss
Coss
Ciss
F2C 4 DIE IV CURVE
Vds in Volts
0
1
2
3
4
5
6
7
8
9
0
2
4
6
8
10
12
14
16
Vg = 2V
Vg = 4V
Vg = 6V
Vg = 8V
Vg = 10V
Vg = 12V
F2C 4 DIE GM & ID vs VGS
Vgs in Volts
0.01
0.1
1
10
0
2
4
6
8
10
12
14
Gm
Id
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
CAPACITANCE VS VOLTAGE
IV CURVE
ID AND GM VS VGS
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
REVISION
8/1/97
相關(guān)PDF資料
PDF描述
F2213 878312421
F2246 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F2247 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F2248 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F30D05 POWER RECTIFIERS(30A,50-200V)
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