參數(shù)資料
型號(hào)： F2213
廠商： Polyfet RF Devices
英文描述： 878312421
中文描述： 專利金金屬化硅柵增強(qiáng)型射頻功率VDMOS晶體管
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 36K
代理商： F2213
RF CHARACTERISTICS ( WATTS OUTPUT )
16
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" process features
gold metal for greatly extended
lifetime. Low output capacitance
and high F enhance broadband
performance
PATENTED GOLD METALIZED
SILICON GATE ENHANCEMENT MODE
RF POWER
VDMOS TRANSISTOR
16Watts Gemini
Package Style AK
HIGH EFFICIENCY, LINEAR,
HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
80Watts
2.1
C
o
200
-65
to 150
6.4 A
30V
V
V
50
50
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
Gps
η
VSWR
Common Source Power Gai
Drain Efficiency
Load Mismatch Toleranc
dB
%
Relative
10
50
1.6
20:1
Idq =
Idq =
Idq =
1.6
1.6
A,
A,
A,
12.5
Vds =
V,
12.5
Vds =
V,
12.5
Vds =
V,
F = 850 MHz
F = 850 MHz
F = 850 MHz
Bvdss
Idss
Igss
Vgs
gM
Rdson
Idsat
Ciss
Crss
Coss
Drain Breakdown Voltag
Zero Bias Drain Curren
Gate Leakage Curren
Gate Bias for Drain Curren
Forward Transconductanc
Saturation Resistanc
Saturation Curren
Common Source Input Capacitanc
Common Source Feedback Capacitanc
Common Source Output Capacitanc
40
0.8
1
7
1
0.8
0.55
9.2
30
4.8
32
Mho
Ohm
Amp
pF
V
V
pF
pF
mA
uA
0.04
Ids =
A,
Vgs = 0V
12.5
Vds =
V,
Vgs = 0V
Vds = 0 V,
Vgs = 30V
0.08
Ids =
A,
Vgs = Vds
Vds = 10V, Vgs = 5V
Vgs = 20V, Ids =6.4
Vgs = 20V, Vds = 10V
12.5
Vds =
V, Vgs = 0V, F = 1 MHz
A
12.5
Vds =
V, Vgs = 0V, F = 1 MHz
12.5
Vds =
V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
REVISION
C
o
C
o
C/W
o
F2213
polyfet rf devices
8/1/97
相關(guān)PDF資料
PDF描述
F2246 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F2247 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F2248 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
F30D05 POWER RECTIFIERS(30A,50-200V)
F30D10 POWER RECTIFIERS(30A,50-200V)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
F2213/16 BK002 制造商:Alpha Wire Company 功能描述:HEAT SHRINK TUBE 3/16 BK 500' 制造商:Alpha Wire Company 功能描述:Cross Referenced to ALPHA WIRE CORP. - Part: ALPFIT221-3/16-BLK-500
F2213/16 BK005 制造商:Alpha Wire Company 功能描述:HEAT SHRINK TUBE 3/16 BLACK 100' 制造商:Alpha Wire Company 功能描述:Cross Referenced to ALPHA WIRE CORP. - Part: ALPFIT221-3/16-BLK-100
F2213/16 BK007 制造商:Alpha Wire Company 功能描述:HEAT SHRINK TUBE 3/16 BK 50'
F2213/16 BK063 制造商:Alpha Wire Company 功能描述:HEAT SHRINK TUBE 3/16 BK 24X6"
F2213/16 BK103 制造商:Alpha Wire Company 功能描述:HEAT SHRINK TUBE 3/16 BK 25X4' 制造商:Alpha Wire Company 功能描述:Cross Referenced to ALPHA WIRE CORP. - Part: ALPFIT221-3/16-BLK-25X4
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