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參數(shù)資料
| 型號(hào)： | F1200G |
| 廠商： | DIOTEC SEMICONDUCTOR AG |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Superfast Silicon-Rectifiers |
| 中文描述： | 12 A, 400 V, SILICON, RECTIFIER DIODE |
| 封裝： | ROHS COMPLIANT, PLASTIC, CASE P600, 2 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 101K |
| 代理商： | F1200G |
F1200A ... F1200G
F1200A ... F1200G
Superfast Silicon-Rectifiers
Superschnelle Silizium-Gleichrichter
Version 2007-05-09
Dimensions - Mae [mm]
Nominal Current
Nennstrom
12 A
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
50...400 V
Plastic case
Kunststoffgehuse
8 x 7.5 [mm]
P600 Style
Weight approx.
Gewicht ca.
1.3 g
Plastic material has UL classification 94V-0
Gehusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings
Grenzwerte
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
V
RRM
[V]
Surge peak reverse voltage
Stospitzensperrspannung
V
RSM
[V]
F1200A
50
50
F1200B
100
100
F1200D
200
200
F1200G
400
400
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
T
A
= 50°C
I
FAV
12 A
1
)
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
I
FRM
80 A
1
)
Peak forward surge current, 50/60 Hz half sine-wave
Stostrom für eine 50/60 Hz Sinus-Halbwelle
T
A
= 25°C
I
FSM
375/390 A
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
T
A
= 25°C
i
2
t
680 A
2
s
Junction temperature – Sperrschichttemperatur
at reduced reverse voltage
bei reduzierter Sperrspannung
V
R
≤ 80% V
RRM
V
R
≤ 20% V
RRM
T
j
T
j
-50...+150°C
-50...+200°C
Storage temperature – Lagerungstemperatur
T
S
-50...+175°C
1
Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlussdrhte in 10 mm Abstand vom Gehuse auf Umgebungstemperatur gehalten werden
Diotec Semiconductor AG
http://www.diotec.com/
1
Type
±0.05
1.2
±0.1
8
7
6
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| F-1201 | 制造商:RHOMBUS-IND 制造商全稱:Rhombus Industries Inc. 功能描述:Starlan Filters/Dual & Single Starlan Isolation Transformers |
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