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參數(shù)資料
| 型號(hào)： | F1210 |
| 廠商： | Polyfet RF Devices |
| 英文描述： | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| 中文描述： | 專利金金屬化硅柵增強(qiáng)型射頻功率VDMOS晶體管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 37K |
| 代理商： | F1210 |
RF CHARACTERISTICS ( WATTS OUTPUT )
10
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" process features
gold metal for greatly extended
lifetime. Low output capacitance
and high F enhance broadband
performance
PATENTED GOLD METALIZED
SILICON GATE ENHANCEMENT MODE
RF POWER
VDMOS TRANSISTOR
10Watts Single Ended
Package Style AA
HIGH EFFICIENCY, LINEAR,
HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
60Watts
3.12
C
o
200
-65
to 150
2 A
30V
V
V
50
50
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
Gps
η
VSWR
Common Source Power Gai
Drain Efficiency
Load Mismatch Toleranc
dB
%
Relative
10
60
0.4
20:1
Idq =
Idq =
Idq =
0.4
0.4
A,
A,
A,
12.5
Vds =
V,
12.5
Vds =
V,
12.5
Vds =
V,
F = 175 MHz
F = 175 MHz
F = 175 MHz
Bvdss
Idss
Igss
Vgs
gM
Rdson
Idsat
Ciss
Crss
Coss
Drain Breakdown Voltag
Zero Bias Drain Curren
Gate Leakage Curren
Gate Bias for Drain Curren
Forward Transconductanc
Saturation Resistanc
Saturation Curren
Common Source Input Capacitanc
Common Source Feedback Capacitanc
Common Source Output Capacitanc
40
1
1
7
1
0.8
0.7
7.5
40
6
30
Mho
Ohm
Amp
pF
V
V
pF
pF
mA
uA
0.05
Ids =
A,
Vgs = 0V
12.5
Vds =
V,
Vgs = 0V
Vds = 0 V,
Vgs = 30V
0.1
Ids =
A,
Vgs = Vds
Vds = 10V, Vgs = 5V
Vgs = 20V, Ids = 8
Vgs = 20V, Vds = 10V
12.5
Vds =
V, Vgs = 0V, F = 1 MHz
A
12.5
Vds =
V, Vgs = 0V, F = 1 MHz
12.5
Vds =
V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
REVISION
C
o
C
o
C/W
o
F1210
polyfet rf devices
8/1/97
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| F1214 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| F1220 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| F1221 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| F12-1000 | 制造商:Triad Magnetics 功能描述:Transformer;12VA;Sec:Ser 1.0A, Par 2.0A;Pri:115/230V;Sec:Ser 12.6VCT, Par 6.3V 制造商:Triad Magnetics 功能描述:Power Transformer 2500Vrms Single Prim. Dual Sec. 115V Prim. 12.6V/6.3V Sec. Through Hole |
| F12-1000-C2 | 功能描述:電源變壓器 12.6VCT@1A 6.3V@2A SINGLE PRIMARY 6PIN RoHS:否 制造商:Triad Magnetics 功率額定值:12 VA 初級(jí)電壓額定值:115 V / 230 V 次級(jí)電壓額定值:12 V / 24 V 安裝風(fēng)格:SMD/SMT 一次繞組:Dual Primary Winding 二次繞組:Dual Secondary Winding 長度:2.5 in 寬度:2 in 高度:1.062 in |
| F12-1000-C2-B | 制造商:Triad Magnetics 功能描述:XFRMR LAMINATED 12VA THRU HOLE |
| F12102-000 | 制造商:TE Connectivity 功能描述:HCTE-0500-0-SP-CS7679 - Cable Rools/Shrink Tubing |
| F1212116RTGV | 制造商:Pentair Technical Products / Hoffman 功能描述:Basic Galvized 3R Trough |
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