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| 型號： | EVAL-ADF4158EB1Z |
| 廠商： | Analog Devices Inc |
| 文件頁數(shù)： | 32/36頁 |
| 文件大?。?/td> | 0K |
| 描述： | BOARD EVALUATION FOR ADF4158 |
| 標(biāo)準(zhǔn)包裝： | 1 |
| 主要目的： | 計(jì)時(shí)，頻率合成器 |
| 嵌入式： | 否 |
| 已用 IC / 零件： | ADF4158 |
| 主要屬性： | 單路分?jǐn)?shù)-N PLL |
| 已供物品： | 板 |
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Data Sheet
ADF4158
Rev. G | Page 5 of 36
C Version1
Parameter
Min
Typ
Max
Unit
Test Conditions/Comments
NOISE CHARACTERISTICS
Normalized Phase Noise Floor
(PNSYNTH)4
216
dBc/Hz
PLL loop bandwidth = 500 kHz;
measured at 100 kHz offset
Normalized 1/f Noise (PN1_f)5
110
dBc/Hz
100 kHz offset; normalized to 1 GHz
Phase Noise Performance6
At VCO output
5805 MHz Output7
93
dBc/Hz
At 5 kHz offset, 32 MHz PFD frequency
1 Operating temperature for C version: 40°C to +125°C.
2 AC coupling ensures AVDD/2 bias.
3 Guaranteed by design. Sample tested to ensure compliance.
4 The synthesizer phase noise floor is estimated by measuring the in-band phase noise at the output of the VCO and subtracting 20 log(N) (where N is the N divider
value) and 10 log(fPFD). PNSYNTH = PNTOT 10 log(fPFD) 20 log(N).
5 The PLL phase noise is composed of 1/f (flicker) noise plus the normalized PLL noise floor. The formula for calculating the 1/f noise contribution at an RF frequency, fRF,
and at a frequency offset f is given by PN = PN1_f + 10 log(10 kHz/f) + 20 log(fRF/1 GHz). Both the normalized phase noise floor and flicker noise are modeled in ADIsimPLL.
6 The phase noise is measured with the EVAL-ADF4158EB1Z and the Agilent E5052A phase noise system.
7 fREFIN = 128 MHz; fPFD = 32 MHz; offset frequency = 5 kHz; RFOUT = 5805 MHz; INT = 181; FRAC = 13631488; loop bandwidth = 100 kHz.
TIMING SPECIFICATIONS
AVDD = DVDD = SDVDD = 2.7 V to 3.3 V; VP = AVDD to 5.5 V; AGND = DGND = SDGND = 0 V; TA = TMIN to TMAX, dBm referred to 50 Ω,
unless otherwise noted.
Table 2. Write Timing
Parameter
Limit at TMIN to TMAX (C Version)
Unit
Test Conditions/Comments
t1
20
ns min
LE setup time
t2
10
ns min
DATA to CLK setup time
t3
10
ns min
DATA to CLK hold time
t4
25
ns min
CLK high duration
t5
25
ns min
CLK low duration
t6
10
ns min
CLK to LE setup time
t7
20
ns min
LE pulse width
Write Timing Diagram
CLK
DATA
LE
DB31 (MSB)
DB30
DB1
(CONTROL BIT C2)
DB2
(CONTROL BIT C3)
DB0 (LSB)
(CONTROL BIT C1)
t1
t2
t3
t7
t6
t4
t5
08
72
8-
02
6
Figure 2. Write Timing Diagram
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