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參數(shù)資料
| 型號(hào)： | EMF32 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | Power management (dual transistors) |
| 中文描述： | 電源管理（）雙晶體管 |
| 文件頁(yè)數(shù)： | 4/5頁(yè) |
| 文件大小： | 91K |
| 代理商： | EMF32 |
EMF32 / UMF32N
Transistors
4/4
50
0
25
150
0
3
6
9
CHANNEL TEMPERATURE : Tch (
°
C)
S
O
D
)
25
50
75
100
125
2
1
4
5
7
8
Fig.9 Static drain-source on-state
resistance vs. channel temperature
V
GS
=
4V
Pulsed
I
D
=
100mA
I
D
=
50mA
0.0001
0.001
0.01
0.02
0.5
F
A
DRAIN CURRENT : I
D
(A)
0.005
0.0002
0.0005 0.001
0.002
0.005
0.01
0.02
0.05
0.05
0.1
0.2
0.1
0.2
0.5
0.002
Ta
=
25
°
C
25
°
C
75
°
C
125
°
C
V
DS
=
3V
Pulsed
Fig.10 Forward transfer admittance vs.
drain current
200m
R
D
SOURCE-DRAIN VOLTAGE : V
SD
(V)
1.5
1
0.5
0
100m
50m
20m
10m
5m
2m
1m
0.5m
0.2m
0.1m
Fig.11 Reverse drain current vs.
source-drain voltage (
Ι
)
V
GS
=
0V
Pulsed
Ta
=
125
°
C
75
°
C
25
°
C
25
°
C
200m
R
D
SOURCE-DRAIN VOLTAGE : V
SD
(V)
1.5
1
0.5
0
100m
50m
20m
10m
5m
2m
1m
0.5m
0.2m
0.1m
Fig.12 Reverse drain current vs.
source-drain voltage (
ΙΙ
)
Ta
=
25
°
C
Pulsed
V
GS
=
4V
0V
0.1
1
2
50
C
DRAIN-SOURCE VOLTAGE : V
DS
(V)
0.5
0.2
0.5
1
2
5
10
20
50
5
10
20
Fig.13 Typical capacitance vs.
drain-source voltage
C
iss
C
oss
C
rss
Ta
=
25
°
C
f
=
1MH
Z
V
GS
=
0V
0.1
10
20
500
S
DRAIN CURRENT : I
D
(mA)
5
0.2
0.5
1
2
5
10
20
50
50
100
200
1000
2
100
Ta
=
25
°
C
V
DD
=
5V
V
GS
=
5V
R
G
=
10
Pulsed
t
d(off)
t
r
t
d(on)
t
f
Fig.14 Switching characteristics
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|---|---|
| EMF32_10 | 制造商:ROHM 制造商全稱:Rohm 功能描述:Power management (dual transistors) |
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