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參數(shù)資料
| 型號(hào)： | EMF32 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | Power management (dual transistors) |
| 中文描述： | 電源管理（）雙晶體管 |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大?。?/td> | 91K |
| 代理商： | EMF32 |
EMF32 / UMF32N
Transistors
z
Electrical characteristic curves
Tr1
l
C
/l
B
=
20
500m
Ta
=
100
°
C
25
°
C
40
°
C
3/4
V
CE
=
5V
100
μ
1m
10m
200
μ
2m
20m
500
μ
5m
50m
100m
1k
500
200
100
50
20
10
5
2
1
D
F
COLLECTOR CURRENT : I
C
(A)
Fig.1
DC current gain vs. collector
current
40
°
C
25
°
C
Ta
=
100
°
C
200m
100m
50m
20m
10m
5m
2m
1m
100
μ
1
1m
10m
200
μ
2m
20m
500
μ
5m
50m
100m
C
C
COLLECTOR CURRENT : I
C
(A)
Fig.2 Collector-emitter saturation
voltage vs. collector current
Tr2
0
1
2
3
4
5
0
0.05
0.1
0.15
D
D
DRAIN-SOURCE VOLTAGE : V
DS
(V)
3V
3.5V
2.5V
V
GS
=
1.5V
4V
2V
Ta
=
25
°
C
Pulsed
Fig.3 Typical output characteristics
0
4
0.1m
100m
D
GATE-SOURCE VOLTAGE : V
GS
(V)
1
10m
3
2
1m
0.2m
0.5m
2m
5m
50m
20m
200m
Ta
=
125
°
C
75
°
C
25
°
C
25
°
C
V
DS
=
3V
Pulsed
Fig.4 Typical transfer characteristics
50
0
0
1
1.5
2
G
G
CHANNEL TEMPERATURE : Tch (
°
C)
0.5
25
25
50
75
100
125
150
Fig.5 Gate threshold voltage vs.
channel temperature
V
DS
=
3V
I
D
=
0.1mA
Pulsed
0.001
1
2
50
S
O
D
)
DRAIN CURRENT : I
D
(A)
0.5
0.002
0.005 0.01 0.02
0.05
0.1
0.2
0.5
5
10
20
Fig.6 Static drain-source on-state
resistance vs. drain current (
Ι
)
Ta
=
125
°
C
75
°
C
25
°
C
25
°
C
V
GS
=
4V
Pulsed
0.001
1
2
50
S
O
D
)
DRAIN CURRENT : I
D
(A)
0.5
0.002
0.005 0.01 0.02
0.05
0.1
0.2
0.5
5
10
20
Fig.7 Static drain-source on-state
resistance vs. drain current (
ΙΙ
)
Ta
=
125
°
C
75
°
C
25
°
C
25
°
C
V
GS
=
2.5V
Pulsed
0
5
10
15
20
0
5
10
15
GATE-SOURCE VOLTAGE : V
GS
(V)
I
D
=
0.1A
S
O
D
)
Fig.8 Static drain-source on-state
resistance vs. gate-source
voltage
Ta
=
25
°
C
Pulsed
I
D
=
0.05A
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