參數(shù)資料
型號(hào)： EM773FHN33,551
廠商： NXP Semiconductors
文件頁(yè)數(shù)： 13/51頁(yè)
文件大?。?/td> 0K
描述： IC ENERGY METER ARM 32VQFN
其它有關(guān)文件： EM773 Energy Metering IC Training
特色產(chǎn)品： EM773 Energy Metering IC
標(biāo)準(zhǔn)包裝： 260
核心處理器： ARM? Cortex?-M0
芯體尺寸： 32-位
速度： 48MHz
連通性： I²C，SPI，UART/USART
外圍設(shè)備： 欠壓檢測(cè)/復(fù)位，POR，WDT
輸入/輸出數(shù)： 25
程序存儲(chǔ)器容量： 32KB（32K x 8）
程序存儲(chǔ)器類(lèi)型： 閃存
RAM 容量： 8K x 8
電壓 - 電源 (Vcc/Vdd)： 1.8 V ~ 3.6 V
振蕩器型： 內(nèi)部
工作溫度： -40°C ~ 85°C
封裝/外殼： 32-VQFN 裸露焊盤(pán)
包裝： 托盤(pán)
配用： 568-6681-ND - BOARD EVAL EM773 METER EU PLUG
568-6680-ND - BOARD EVAL EM773 METER US PLUG
其它名稱： 568-5213
EM773
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 3 January 2012
20 of 51
NXP Semiconductors
EM773
Energy metering IC
8.
Limiting values
[1]
The following applies to the limiting values:
a) This product includes circuitry specifically designed for the protection of its internal devices from the damaging effects of excessive
static charge. Nonetheless, it is suggested that conventional precautions be taken to avoid applying greater than the rated
maximum.
b) Parameters are valid over operating temperature range unless otherwise specified. All voltages are with respect to VSS unless
otherwise noted.
[2]
Including voltage on outputs in 3-state mode.
[3]
The peak current is limited to 25 times the corresponding maximum current.
[4]
The maximum non-operating storage temperature is different than the temperature for required shelf life which should be determined
based on required shelf lifetime. Please refer to the JEDEC spec (J-STD-033B.1) for further details.
[5]
Human body model: equivalent to discharging a 100 pF capacitor through a 1.5 k
series resistor.
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).[1]
Symbol
Parameter
Conditions
Min
Max
Unit
VDD
supply voltage (core and external rail)
1.8
3.6
V
VI
input voltage
5 V tolerant I/O
pins; only valid
when the VDD
supply voltage is
present
0.5
+5.5
V
IDD
supply current
per supply pin
100
mA
ISS
ground current
per ground pin
100
mA
Ilatch
I/O latch-up current
(0.5V
DD) < VI <
(1.5VDD);
Tj < 125 C
-
100
mA
Tstg
storage temperature
non-operating
65
+150
C
Tj(max)
maximum junction temperature
-
150
C
Ptot(pack)
total power dissipation (per package)
based on package
heat transfer, not
device power
consumption
-1.5
W
VESD
electrostatic discharge voltage
human body
model; all pins
6500
+6500
V
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