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| 型號(hào)： | EM6K18000 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | Male terminal; Gender:Male; Number of Contacts:1; Series:MX150L; Color:Black; For Use With:19419, 19429; Pitch Spacing:5.84mm; Wire Size (AWG):22-18 |
| 中文描述： | 小開(kāi)關(guān)（30V的，0.1A） |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 85K |
| 代理商： | EM6K18000 |
EM6K1
Transistor
!
Electrical characteristics
(Ta=25
°
C)
Parameter
Symbol
I
GSS
V
(BR)DSS
I
DSS
V
GS(th)
R
DS(on)
R
DS(on)
C
iss
Y
fs
C
oss
C
rss
Min.
30
0.8
20
5
13
9
4
±
1
1.0
1.5
8
7
13
μ
A
V
GS
=
±
20V, V
DS
=
0V
I
D
=
10
μ
A, V
GS
=
0V
V
DS
=
30V, V
GS
=
0V
V
DS
=
3V, I
D
=
10mA
V
DS
=
3V, I
D
=
100
μ
A
I
D
=
10mA, V
GS
=
4V
I
D
=
1mA, V
GS
=
2.5V
V
DS
=
5V
V
GS
=
0V
f
=
1MHz
V
μ
A
V
pF
mS
pF
pF
t
d(on)
15
I
D
=
10mA, V
DD
5V
V
GS
=
5V
R
L
=
500
R
GS
=
10
ns
t
r
35
ns
t
d(off)
80
ns
t
r
80
ns
Typ.
Max.
Unit
Conditions
Gate
source leakage
Drain
source breakdown voltage
Gate threshold voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn
on delay time
Turn
off delay time
Rise time
Fall time
Static drain
source on
starte
resistance
Zero gate voltage drain current
!
Electrical characteristic curves
0
1
2
3
4
5
0
0.05
0.1
0.15
D
D
A
DRAIN-SOURCE VOLTAGE : V
DS
(
V)
3V
3.5V
2.5V
V
GS
=1.5V
4V
2V
Fig.1 Typical Output Characteristics
0
4
0.1m
100m
D
A
GATE-SOURCE VOLTAGE : V
GS
(
V)
1
10m
3
2
1m
0.2m
0.5m
2m
5m
50m
20m
200m
V
DS
=3V
Pulsed
Ta=125
°
C
75
°
C
25
°
C
25
°
C
Fig.2 Typical Transfer Characteristics
50
0
0
1
1.5
2
G
G
(
V
CHANNEL TEMPERATURE : Tch
(
°
C)
0.5
25
25
50
75
100
125
150
V
DS
=3V
I
D
=0.1mA
Fig.3 Gate Threshold Voltage vs.
Channel Temperature
0.001
1
2
50
S
O
D
(
)
)
DRAIN CURRENT : I
D
(A)
0.5
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
5
10
20
V
GS
=4V
Pulsed
Ta=125
°
C
75
°
C
25
°
C
25
°
C
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current (
Ι
)
0.001
1
2
50
S
O
D
(
)
)
DRAIN CURRENT : I
D
(A)
0.5
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
5
10
20
V
GS
=2.5V
Pulsed
Ta=125
°
C
75
°
C
25
°
C
25
°
C
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current (
ΙΙ
)
0
5
10
15
20
0
5
10
15
GATE-SOURCE VOLTAGE : V
GS
(
V)
I
D
=0.1A
S
O
D
(
)
)
Ta=25
°
C
Pulsed
I
D
=0.05A
Fig.6 Static Drain-Source On-State
Resistance vs. Gate-Source
Voltage
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