參數(shù)資料
型號(hào)： EM6617DL28A
英文描述： Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP; Temperature Range: 0&degC to 70°C; Package: 8-SOIC T&R
中文描述： 微控制器
文件頁數(shù)： 57/67頁
文件大?。?/td> 824K
代理商： EM6617DL28A
EM6617
03/02 REV. C/442
Copyright
2002, EM Microelectronic-Marin SA
60
www.emmicroelectronic.com
21.7 Supply Voltage Level Detector
Parameter
Conditions Symbol
Min.
Typ.
Max.
Unit
SVLD voltage Level1
-10 ... 60
°C
VSVLD1
2.02
2.20
2.38
V
-40 ... 85
°C
1.98
2.20
2.42
SVLD voltage Level2
-10 ... 60
°C
VSVLD2
2.30
2.50
2.70
V
-40 ... 85
°C
2.25
2.50
2.75
SVLD voltage Level3
-10 ... 60
°C
VSVLD3
2.78
3.02
3.26
V
-40 ... 85
°C
2.72
3.02
3.32
Temperature coefficient
0 ... 50
°C
< +/- 0.2
mV/
°C
21.8 ADC 8 Bit
Conditions: T=25
°C , VDD=3.0V, System Clock=32 KHz , Ramp Input
Parameter
Conditions
Symb.
Min.
Typ.
Max.
Unit
Differential nonlinearity
Vgnd = VDD/2
Vref = VDD
DNL
+/-0.2
+/-0.5
LSB
Integral nonlinearity
Vgnd = VDD/2
Vref = VDD
INL
+/-0.2
+/-0.5
LSB
Gain Error
Vgnd = VDD/2
Vref = VDD
GE
+/- 0.5
LSB
Offest Error
Vgnd = VDD/2
Vref = VDD
OE
+/- 0.5
LSB
Total unadjusted error
Vgnd = VDD/2
Vref = VDD
TUE
+/- 1
LSB
Battery voltages for full
range conversion
Error DNL
0.2 LSB
Vrange
2.6
5.5
V
Missing Codes
No Missing Codes
The total unadjusted error is a combination of the offset, gain and INL errors.
21.9 EEPROM
Parameter
Conditions
Symb.
Min.
Typ.
Max.
Unit
Read time (note 9)
-40 ... 85°C
EEPrd
45
us
Write time (note 9)
-40 ... 85°C
EEPwr
24
ms
VDD during write and read
operation
-40 ... 85°C
VEEP
2.0
5.5
V
Note 9
: The typical values are guaranteed by design for a) 32kHz operation or b) 128kHz operation with the
corresponding metal mask set. Using different frequencies one must assure not to fall below min value.
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EM6617SO28A Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP; Temperature Range: 0&degC to 70&deg;C; Package: 8-EPSOIC T&amp;R
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