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參數(shù)資料
| 型號： | EM614163 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 256K x 16 High Speed EDO DRAM |
| 中文描述： | 256K × 16高速EDO公司的DRAM |
| 文件頁數(shù)： | 5/23頁 |
| 文件大小： | 145K |
| 代理商： | EM614163 |
EtronTech
Em614163A-30/35/40/45
Preliminary
5
April 1997
Recommended Operating Conditions
Parameter
Symbol
V
SS
V
CC
V
IH
Min
0
4.5
2.4
Typ
0
5.0
D
Max
0
5.5
Unit
V
V
V
Notes
2
1, 2
1
Supply voltage
Input high voltage
V
CC
+ 0.3
Input low voltage
V
IL
- 0.5
D
0.8
V
1, 3
Notes:
1. All voltage referenced to V
SS
.
2. The supply voltage with all V
CC
pins must be the same level.
The supply voltage with all V
SS
pins must be the same level.
3. V
IL
(min.) = - 1.2V for pulse width
30ns.
DC Characteristics
T
A
= 0 to +70
°
C; Vcc = +5V
±
10%, Vss = 0V
Em614163A
-30/35/40/45
Parameter
Symbol
Test Conditions
Unit
Notes
Min
Max
Operating current
I
CC
1
RAS
cycling
LCAS
,
UCAS
cycling
t
RC
= min.
RAS
,
LCAS
,
UCAS
= V
IH
Dout = High-Z
RAS
,
LCAS
,
UCAS
,
OE
=
V
CC
- 0.2V
Dout = High-Z
RAS
cycling,
CAS
= V
IH
t
RC
= min.
RAS = V
IH
LCAS
,
UCAS
= V
IL
Dout = enable
t
RC
= min.
RAS
,
CAS
cycling
D
280/250/225/200
mA
1, 2
Standby current
I
CC
2
D
2
mA
D
1
mA
RAS
-only refresh
current
I
CC
3
D
280/250/225/200
mA
2
Standby current
I
CC
5
D
5
mA
1
CAS
-before-
RAS
refresh current
I
CC
6
D
280/250/225/200
mA
Fast page mode
current
Input leakage
current
Output leakage
current
Output high voltage
Output low voltage
Notes:
1. I
CC
depends on output load condition when the device is selected. I
CC
-max is specified at the output open
condition.
2. Address can be changed once or less while RAS= V
IL
.
3. Address can be changed once or less while LCAS and UCAS = V
IL
.
4. All the V
CC
pins shall be supplied with the same voltage. And all the V
SS
pins shall be supplied with the
same voltage.
I
CC
7
t
PC
= min.
D
280/250/225/200
mA
1 3
I
LI
0V
Vin
V
CC
-10
10
μ
A
I
LO
0V
Vout
V
CC
Dout = Disable
I
OH
= - 2.5 mA
I
OL
= + 2.1 mA
-10
10
μ
A
V
OH
V
OL
2.4
V
V
0.4
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PDF描述 |
|---|---|
| EM614163A | 256K x 16 High Speed EDO DRAM |
| EM614163A-30 | 256K x 16 High Speed EDO DRAM |
| EM614163A-35 | 256K x 16 High Speed EDO DRAM |
| EM614163A-40 | 256K x 16 High Speed EDO DRAM |
| EM614163A-45 | 256K x 16 High Speed EDO DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
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| EM620F32-45LL | 制造商:EMLSI 制造商全稱:Emerging Memory & Logic Solutions Inc 功能描述:256K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| EM620F32-85LF | 制造商:EMLSI 制造商全稱:Emerging Memory & Logic Solutions Inc 功能描述:256K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| EM620F32-85LL | 制造商:EMLSI 制造商全稱:Emerging Memory & Logic Solutions Inc 功能描述:256K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
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