參數(shù)資料
型號(hào): EM424M3284LBA-75FE
廠商: Electronic Theatre Controls, Inc.
英文描述: 512Mb (4M】4Bank】32) Double DATA RATE SDRAM
中文描述: 的512Mb(4分】4Bank】32)的雙倍數(shù)據(jù)速率SDRAM
文件頁(yè)數(shù): 8/20頁(yè)
文件大小: 343K
代理商: EM424M3284LBA-75FE
eorex
EM42AM3284LBA
Jul. 2006
www.eorex.com
8/20
AC Operating Test Characteristics (Continued)
(V
DD
=1.8V
±
0.1V, T
A
=0°C ~70°C)
-75
Units
Symbol
Parameter
Min.
0.4
Max.
0.6
t
RPST
Read Postamble
t
CK
t
RAS
Active to Precharge command period
45
120k
ns
t
RC
t
RFC
t
RCD
t
RP
Active to Active command period
Auto Refresh Row Cycle Time
Active to Read or Write delay
Precharge command period
75
108
30
22.5
ns
ns
ns
ns
t
RRD
Active bank A to B command period
15
ns
t
CCD
Column address to column address
delay
Pre-charge command to high-Z
Last data in to Write command
Last data in to Precharge command
Exit self refresh to non-col. command
Internal Write to Read command delay
CKE minimum pulse width
Write to pre-charge delay(same bank)
Read to pre-charge delay(same bank)
Write to Read command delay
Burst stop to write delay
Write recovery
Average periodic refresh interval
1
t
CK
t
HZP
t
CDLW
t
DPL
t
SREX
t
WTR
t
CKE
t
WPD
t
RPD
t
WRD
t
BSTW
t
WRD
t
REFI
3
1
3
16
1
2
t
CK
t
CK
t
CK
t
CK
t
CK
t
CK
t
CK
t
CK
t
CK
t
CK
t
CK
us
3+BL/2
BL/2
2+BL/2
3
2
7.8
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