參數(shù)資料
型號(hào): EM424M3284LBA-75FE
廠商: Electronic Theatre Controls, Inc.
英文描述: 512Mb (4M】4Bank】32) Double DATA RATE SDRAM
中文描述: 的512Mb(4分】4Bank】32)的雙倍數(shù)據(jù)速率SDRAM
文件頁數(shù): 5/20頁
文件大小: 343K
代理商: EM424M3284LBA-75FE
eorex
EM42AM3284LBA
Jul. 2006
www.eorex.com
5/20
Recommended DC Operating Conditions
(V
DD
=1.8V
±
0.1V, T
A
=0°C ~ 70°C)
Max.
-75
Symbol
Parameter
Test Conditions
Units
I
DD1
Operating Current
(Note 1)
Burst length=2,
t
RC
t
RC
(min.), I
OL
=0mA,
One bank active
80
mA
I
DD2P
Precharge Standby Current in
Power Down Mode
CKE
V
IL
(max.), t
CK
=min
1
mA
I
DD2N
Precharge Standby Current in
Non-power Down Mode
CKE
V
IL
(min.), t
CK
=min,
/CS
V
IH
(min.)
Input signals are changed one time
during 2 clks
4
mA
I
DD3P
Active Standby Current in
Power Down Mode
CKE
V
IL
(max.), t
CK
=min
3
mA
I
DD3N
Active Standby Current in
Non-power Down Mode
CKE
V
IH
(min.), t
CK
=min,
/CS
V
IH
(min.)
Input signals are changed one time
during 2 clks
t
CK
t
CK
(min.), I
OL
=0mA,
All banks active
10
mA
I
DD4
Operating Current (Burst
Mode)
(Note 2)
Refresh Current
(Note 3)
120
mA
I
DD5
t
RC
t
RFC
(min.), All banks active
90
mA
I
DD6
Self Refresh Current
CKE
0.2V
0.8
mA
*All voltages referenced to V
SS
.
Note 1:
I
DD1
depends on output loading and cycle rates.
Specified values are obtained with the output open.
Input signals are changed only one time during t
CK
(min.)
Note 2:
I
DD4
depends on output loading and cycle rates.
Specified values are obtained with the output open.
Input signals are changed only one time during t
CK
(min.)
Note 3:
Min. of t
RFC
(Auto refresh Row Cycle Times) is shown at AC Characteristics.
Recommended DC Operating Conditions (Continued)
Symbol
Parameter
0
V
I
V
DDQ
, V
DDQ
=V
DD
All other pins not under
test=0V
I
OL
Output Leakage Current
0
V
O
V
DDQ
, D
OUT
is disabled
V
OH
High Level Output Voltage I
O
=-0.1mA
V
OL
Low Level Output Voltage
I
O
=+0.1mA
Test Conditions
Min.
Typ.
Max.
Units
I
IL
Input Leakage Current
-2
+2
uA
-1.5
+1.5
0.1*V
DDQ
uA
V
V
0.9*V
DDQ
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