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參數(shù)資料
| 型號： | EDS6416CHBH |
| 廠商： | Elpida Memory, Inc. |
| 英文描述： | 64M bits SDRAM (4M words x 16 bits) |
| 中文描述： | 6400位的SDRAM（4分字× 16位） |
| 文件頁數(shù)： | 26/49頁 |
| 文件大小： | 716K |
| 代理商： | EDS6416CHBH |
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EDS6416AHBH, EDS6416CHBH
Auto Precharge
Data Sheet E0442E40 (Ver. 4.0)
26
Read with auto-precharge
In this operation, since precharge is automatically performed after completing a read operation, a precharge
command need not be executed after each read operation. The command executed for the same bank after the
execution of this command must be the bank active (ACT) command. In addition, an interval defined by
l
APR is
required before execution of the next command.
[Clock cycle time]
/CAS latency
Precharge start cycle
3
2 cycle before the final data is output
2
1 cycle before the final data is output
CLK
l
APR
l
RAS
l
APR
CL=2 Command
CL=3 Command
DQ
DQ
Note: Internal auto-precharge starts at the timing indicated by " ".
And an interval of tRAS (
l
RAS) is required between previous active (ACT) command and internal precharge " ".
ACT
READA
ACT
out3
out2
out1
out0
l
RAS
ACT
READA
ACT
out3
out2
out1
out0
Burst Read (BL = 4)
Write with auto-precharge
In this operation, since precharge is automatically performed after completing a burst write or single write operation,
a precharge command need not be executed after each write operation. The command executed for the same bank
after the execution of this command must be the bank active (ACT) command. In addition, an interval of
l
DAL is
required between the final valid data input and input of next command.
CLK
Command
DQ
l
DAL
l
RAS
ACT
WRITA
in0
in1
in2
in3
ACT
Note: Internal auto-precharge starts at the timing indicated by " ".
and an interval of tRAS (
l
RAS) is required between previous active (ACT) command
and internal precharge " ".
Burst Write (BL = 4)
相關PDF資料 |
PDF描述 |
|---|---|
| EDS6416CHTA | 64M bits SDRAM (4M words x 16 bits) |
| EDS6416CHTA-75-E | 64M bits SDRAM (4M words x 16 bits) |
| EDS6416AHBH | 64M bits SDRAM (4M words x 16 bits) |
| EDS6416AHBH-6B-E | Circular Connector; No. of Contacts:39; Series:MS27468; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:21; Circular Contact Gender:Socket; Circular Shell Style:Jam Nut Receptacle; Insert Arrangement:21-39 RoHS Compliant: No |
| EDS6416AHBH-75-E | 64M bits SDRAM (4M words x 16 bits) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| EDS6416CHBH-75-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:64M bits SDRAM (4M words x 16 bits) |
| EDS6416CHTA | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:64M bits SDRAM (4M words x 16 bits) |
| EDS6416CHTA-75-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:64M bits SDRAM (4M words x 16 bits) |
| EDS6416GHTA | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:64M bits SDRAM |
| EDS6416GHTA-10-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:64M bits SDRAM |
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