參數(shù)資料
型號(hào)： EDS5116ABTA
廠商： Elpida Memory, Inc.
英文描述： 512M bits SDRAM
中文描述： 512M比特內(nèi)存
文件頁(yè)數(shù)： 37/52頁(yè)
文件大小： 564K
代理商： EDS5116ABTA
EDS5104ABTA, EDS5108ABTA, EDS5116ABTA
Preliminary Data Sheet E0250E10 (Ver. 1.0)
37
Read with auto precharge to Write command interval
1. Different bank: When some banks are in the active state, the second write command (another bank) is executed.
However, DQM must be set High so that the output buffer becomes High-Z before data input. The internal auto-
precharge of one bank starts at the next clock of the second command.
CLK
Command
BS
DQ (output)
DQ (input)
CL = 2
CL = 3
READA
WRIT
in B0
in B1
in B2
in B3
BL = 4
bank0
ReadA
bank3
Write
Note: Internal auto-precharge starts at the timing indicated by " ".
DQM
High-Z
Read with Auto Precharge to Write Command Interval (Different bank)
2. Same bank: The consecutive write command from read with auto precharge (the same bank) is illegal. It is
necessary to separate the two commands with a bank active command.
Write with auto precharge to Read command interval
1. Different bank: When some banks are in the active state, the second read command (another bank) is executed.
However, in case of a burst write, data will continue to be written until one clock before the read command is
executed. The internal auto-precharge of one bank starts at 2 clocks later from the second command.
CLK
Command
BS
DQ (output)
DQ (input)
WRITA
READ
out B0
out B1
out B2
out B3
CL = 3
BL = 4
bank0
WriteA
bank3
Read
Note: Internal auto-precharge starts at the timing indicated by " ".
DQM
in A0
Write with Auto Precharge to Read Command Interval (Different bank)
2. Same bank: The consecutive read command from write with auto precharge (the same bank) is illegal. It is
necessary to separate the two commands with a bank active command.
相關(guān)PDF資料
PDF描述
EDS5116ABTA-6B 512M bits SDRAM
EDS5116ABTA-75 512M bits SDRAM
EDS5116ABTA-7A 512M bits SDRAM
EDS5104ABTA-6B RP15 (F) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 12V; Output Voltage (Vdc): 12V; 2:1 Wide Input Voltage Range; 15 Watts Output Power; 1.6kVDC Isolation; UL Certified; Fixed Operating Frequency; Six-Sided Continuous Shield; Standard 50.8 x25.4x10.2mm Package; Efficiency to 88%
EDS5108ABTA-6B 512M bits SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EDS5116ABTA-6B 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits SDRAM
EDS5116ABTA-75 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits SDRAM
EDS5116ABTA-7A 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits SDRAM
EDS51321DBH-6DTS-F 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits Mobile RAM? WTR (Wide Temperature Range)
EDS51321DBH-7BTS-F 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits Mobile RAM? WTR (Wide Temperature Range)
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*