參數(shù)資料
型號(hào): EDS5108ABTA
廠商: Elpida Memory, Inc.
英文描述: 512M bits SDRAM
中文描述: 512M比特內(nèi)存
文件頁數(shù): 4/52頁
文件大?。?/td> 564K
代理商: EDS5108ABTA
EDS5104ABTA, EDS5108ABTA, EDS5116ABTA
Preliminary Data Sheet E0250E10 (Ver. 1.0)
4
Electrical Specifications
All voltages are referenced to VSS (GND).
After power up (refer to the Power-up Sequence).
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Note
Voltage on any pin relative to VSS
VT
–0.5 to VDD + 0.5 (
4.6 (max.))
V
Supply voltage relative to VSS
VDD
–0.5 to +4.6
V
Short circuit output current
IOS
50
mA
Power dissipation
PD
1.0
W
Operating temperature
TA
0 to +70
°
C
°
C
Storage temperature
Tstg
–55 to +125
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended Operating Conditions (TA = 0 to 70
°
C)
Parameter
Symbol
min.
max.
Unit
Notes
Supply voltage
VDD, VDDQ
3.0
3.6
V
1
VSS, VSSQ
0
0
V
2
Input high voltage
VIH
2.0
VDD + 0.3
V
3
Input low voltage
VIL
–0.3
0.8
V
4
Notes: 1. The supply voltage with all VDD
and VDDQ pins must be on the same level.
2. The supply voltage with all VSS and VSSQ pins must be on the same level.
3. VIH (max.) = VDD + 2.0 V for pulse width
3n
s at VDD.
4. VIL (min.) = VSS – 2.0 V for pulse width
3ns at VSS.
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