參數(shù)資料
型號: EDS5108ABTA
廠商: Elpida Memory, Inc.
英文描述: 512M bits SDRAM
中文描述: 512M比特內(nèi)存
文件頁數(shù): 31/52頁
文件大?。?/td> 564K
代理商: EDS5108ABTA
EDS5104ABTA, EDS5108ABTA, EDS5116ABTA
Preliminary Data Sheet E0250E10 (Ver. 1.0)
31
Burst Stop Command
During a read cycle, when the burst stop command is issued, the burst read data are terminated and the data bus
goes to High-Z after the /CAS latency from the burst stop command.
CLK
Command
DQ
(CL = 2)
DQ
(CL = 3)
READ
BST
out
out
out
out
out
out
High-Z
High-Z
Burst Stop at Read
During a write cycle, when the burst stop command is issued, the burst write data are terminated and data bus goes
to High-Z at the same clock with the burst stop command.
CLK
Command
DQ
in
in
in
BST
WRITE
in
High-Z
Burst Stop at Write
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參數(shù)描述
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