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參數(shù)資料
| 型號： | EDS2516CDTA |
| 廠商： | Elpida Memory, Inc. |
| 英文描述： | 256M bits SDRAM (16M words x 16 bits) |
| 中文描述： | 256M位的SDRAM（1,600字× 16位） |
| 文件頁數(shù)： | 32/50頁 |
| 文件大?。?/td> | 703K |
| 代理商： | EDS2516CDTA |
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EDS2516CDTA
Prelimimary Data Sheet E0545E40 (Ver. 4.0)
32
Read command to Write command interval
1. Same bank, same ROW address: When the write command is executed at the same ROW address of the same
bank as the preceding read command, the write command can be performed after an interval of no less than 1
clock. However, UDQM and LDQM must be set High so that the output buffer becomes High-Z before data input.
CLK
Command
DQ (output)
in B2
in B3
READ
WRIT
in B0
in B1
High-Z
DQ (input)
CL=2
CL=3
UDQM
LDQM
BL = 4
Burst write
READ to WRITE Command Interval (1)
CLK
Command
DQ
READ
WRIT
CL=2
CL=3
UDQM
LDQM
2 clock
out
out
out
out
out
in
in
in
in
in
in
in
in
READ to WRITE Command Interval (2)
2. Same bank, different ROW address: When the ROW address changes, consecutive write commands cannot be
executed; it is necessary to separate the two commands with a precharge command and a bank active
command.
3. Different bank: When the bank changes, the write command can be performed after an interval of no less than 1
cycle, provided that the other bank is in the bank active state. However, UDQM and LDQM must be set High so
that the output buffer becomes High-Z before data input.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| EDS2516CDTA-75-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits SDRAM (16M words x 16 bits) |
| EDS2516EEBH-9ATT-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits SDRAM WTR (Wide Temperature Range) |
| EDS2516EEBH-TT | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits SDRAM WTR (Wide Temperature Range) |
| EDS2516JEBH-75R3 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits AS SDRAM |
| EDS2516JEBH-75R3-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits AS SDRAM |
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