參數(shù)資料
型號: EDS2516APTA-75TI
廠商: ELPIDA MEMORY INC
元件分類: DRAM
英文描述: 256M bits SDRAM WTR (Wide Temperature Range)
中文描述: 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
封裝: PLASTIC, TSOP2-54
文件頁數(shù): 26/52頁
文件大小: 720K
代理商: EDS2516APTA-75TI
EDS2516APTA-TI-E
Data Sheet E0677E10 (Ver. 1.0)
26
Power-up sequence
Power-up sequence
The SDRAM should be goes on the following sequence with power up.
The CLK, CKE, /CS, UDQM, LDQM and DQ pins keep low till power stabilizes.
The CLK pin is stabilized within 100 μs after power stabilizes before the following initialization sequence.
The CKE and UDQM and LDQM and driven to high between power stabilizes and the initialization sequence.
This SDRAM has VDD clamp diodes for CLK, CKE, /CS, address, /RAS, /CAS, /WE, UDQM, LDQM and DQ pins. If
these pins go high before power up, the large current flows from these pins to VDD through the diodes.
Initialization sequence
When 200 μs or more has past after the above power-up sequence, all banks must be precharged using the
precharge command (PALL). After tRP delay, set 8 or more auto refresh commands (REF). Set the mode register
set command (MRS) to initialize the mode register. We recommend that by keeping UDQM, LDQM and CKE to
High, the output buffer becomes High-Z during Initialization sequence, to avoid DQ bus contention on memory
system formed with a number of device.
VDD, VDDQ
Power up sequence
Initialization sequence
100
μ
s
0 V
Low
Low
Low
CKE,
UDQM, LDQM
CLK
/CS, DQ
200
μ
s
Power stabilize
Power-up sequence and Initialization sequence
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EDS2516APTA-75TI-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits SDRAM WTR (Wide Temperature Range)
EDS2516APTA-7A 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits SDRAM
EDS2516APTA-7A-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits SDRAM
EDS2516APTA-7AL 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits SDRAM
EDS2516APTA-7AL-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits SDRAM