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參數(shù)資料
| 型號： | EDS2516ADTA-75-E |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | 256M bits SDRAM (16M words x 16 bits) |
| 中文描述： | 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 |
| 封裝： | ROHS COMPLIANT, PLASTIC, TSOP2-54 |
| 文件頁數(shù)： | 13/50頁 |
| 文件大?。?/td> | 703K |
| 代理商： | EDS2516ADTA-75-E |
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EDS2516CDTA
Prelimimary Data Sheet E0545E40 (Ver. 4.0)
13
Command Operation
Command Truth Table
The SDRAM recognizes the following commands specified by the /CS, /RAS, /CAS, /WE and address pins.
CKE
Function
Symbol
n – 1 n
/CS
/RAS
/CAS
/WE
BA1
BA0
A10
A0 to
A12
Device deselect
DESL
H
×
H
×
×
×
×
×
×
×
No operation
NOP
H
×
L
H
H
H
×
×
×
×
Burst stop
BST
H
×
L
H
H
L
×
×
×
×
Read
READ
H
×
L
H
L
H
V
V
L
V
Read with auto precharge
READA
H
×
L
H
L
H
V
V
H
V
Write
WRIT
H
×
L
H
L
L
V
V
L
V
Write with auto precharge
WRITA
H
×
L
H
L
L
V
V
H
V
Bank activate
ACT
H
×
L
L
H
H
V
V
V
V
Precharge select bank
PRE
H
×
L
L
H
L
V
V
L
×
Precharge all banks
PALL
H
×
L
L
H
L
×
×
H
×
Mode register set
Remark: H: VIH. L: VIL.
×
: VIH or VIL. V: Valid address input.
Device deselect command [DESL]
When this command is set (/CS is High), the SDRAM ignore command input at the clock. However, the internal
status is held.
No operation [NOP]
This command is not an execution command. However, the internal operations continue.
Burst stop command [BST]
This command can stop the current burst operation.
Column address strobe and read command [READ]
This command starts a read operation. In addition, the start address of burst read is determined by the column
address (see Address Pins Table in Pin Function) and the bank select address (BA0, BA1). After the read operation,
the output buffer becomes High-Z.
Read with auto-precharge [READA]
This command automatically performs a precharge operation after a burst read with a burst length of 1, 2, 4 or 8.
Column address strobe and write command [WRIT]
This command starts a write operation. When the burst write mode is selected, the column address (see Address
Pins Table in Pin Function) and the bank select address (BA0, BA1) become the burst write start address. When the
single write mode is selected, data is only written to the location specified by the column address (see Address Pins
Table in Pin Function) and the bank select address (BA0, BA1).
Write with auto-precharge [WRITA]
This command automatically performs a precharge operation after a burst write with a length of 1, 2, 4 or 8, or after a
single write operation.
MRS
H
×
L
L
L
L
L
L
L
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EDS2516APSA | 256M bits SDRAM |
| EDS2516APSA-75 | 256M bits SDRAM |
| EDS2516APSA-75L | 256M bits SDRAM |
| EDS2516APSA-7A | 256M bits SDRAM |
| EDS2516APSA-7AL | 256M bits SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EDS2516AFTA | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits SDRAM |
| EDS2516AFTA-6B-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits SDRAM |
| EDS2516AFTA-75-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits SDRAM |
| EDS2516APSA | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits SDRAM |
| EDS2516APSA-75 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits SDRAM |
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