參數(shù)資料
型號(hào): EDS1232CABB-75-E
廠商: ELPIDA MEMORY INC
元件分類: DRAM
英文描述: 128M bits SDRAM
中文描述: 4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
封裝: FBGA-90
文件頁(yè)數(shù): 7/55頁(yè)
文件大?。?/td> 564K
代理商: EDS1232CABB-75-E
EDS1232CABB, EDS1232CATA
Preliminary Data Sheet E0247E40 (Ver. 4.0)
7
Pin Capacitance (TA = 25°C, f = 1MHz)
90-ball FBGA
86-pin TSOP (II)
Parameter
Symbol Pins
min.
Typ
max.
min.
Typ
max.
Unit
Notes
Input capacitance
CI1
Address
CLK, CKE, /CS, /RAS,
/CAS, /WE, DQM
1.5
3.0
2.5
4.0
pF
CI2
1.5
3.0
2.5
4.0
pF
Data input/output
capacitance
CI/O
DQ
3.0
5.5
4.0
6.5
pF
AC Characteristics (TA = 0 to +70
°
C, VDD, VDDQ = 2.5V
±
0.2V, VSS, VSSQ = 0V)
-75
-1A
Parameter
Symbol
min.
max.
min.
max.
Unit
Notes
System clock cycle time
(CL = 2)
(CL = 3)
tCK
10
10
ns
tCK
7.5
10
ns
CLK high pulse width
tCH
2.5
3
ns
CLK low pulse width
tCL
2.5
3
ns
Access time from CLK
tAC
5.4
6
ns
Data-out hold time
tOH
2
2
ns
CLK to Data-out low impedance
tLZ
0
0
ns
CLK to Data-out high impedance
tHZ
2
5.4
2
6
ns
Input setup time
tSI
1.5
2
ns
Input hold time
tHI
0.8
1
ns
CKE setup time (Power down exit)
ACT to REF/ACT command period
(operation)
(refresh)
tCKSP
1.5
2
ns
tRC
67.5
70
ns
tRC
67.5
70
ns
Active to Precharge command period
Active command to column command
(same bank)
Precharge to active command period
Write recovery or data-in to precharge
lead time
tRAS
45
120000
50
120000
ns
tRCD
20
20
ns
tRP
20
20
ns
tDPL
15
20
ns
Last data into active latency
tDAL
2CLK +
20ns
15
2CLK +
20ns
20
Active (a) to Active (b) command period tRRD
ns
Mode register set cycle time
tRSC
2
2
CLK
Transition time (rise and fall)
Refresh period
(4096 refresh cycles)
tT
0.5
30
0.5
30
ns
tREF
64
64
ms
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