參數(shù)資料
型號: EDS1232AATA-75
廠商: ELPIDA MEMORY INC
元件分類: DRAM
英文描述: 128M bits SDRAM
中文描述: 4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PDSO86
封裝: PLASTIC, TSOP2-86
文件頁數(shù): 8/55頁
文件大?。?/td> 564K
代理商: EDS1232AATA-75
EDS1232CABB, EDS1232CATA
Preliminary Data Sheet E0247E40 (Ver. 4.0)
8
Test Conditions
AC high level input voltage / low level input voltage: 2.1V / 0.3V
Input timing measurement reference level: 1.2V
Transition time (Input rise and fall time): 1ns
Output timing measurement reference level: 1.2V
Termination voltage (Vtt): 1.2V
tCK
tCH
tCL
2.1V
1.2V
0.3V
CLK
2.1V
1.2V
0.3V
Input
tSETUP tHOLD
Output
tAC
tOH
Output
Z = 50
Vtt
30pF
50
Input Waveforms and Output Load
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參數(shù)描述
EDS1232AATA-75-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128M bits SDRAM (4M words x 32 bits)
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