參數(shù)資料
型號(hào)： EDS1232AASE-60-E
廠商： ELPIDA MEMORY INC
元件分類(lèi)： DRAM
英文描述： 128M bits SDRAM (4M words x 32 bits)
中文描述： 4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
封裝： ROHS COMPLIANT, FBGA-90
文件頁(yè)數(shù)： 23/55頁(yè)
文件大小： 564K
代理商： EDS1232AASE-60-E
EDS1232CABB, EDS1232CATA
Preliminary Data Sheet E0247E40 (Ver. 4.0)
23
Programming Mode Registers
The mode register is programmed by the Mode register set command using address bits A11 through A0, BA0 and
BA1 as data inputs. The registers retain data until it is re-programmed, or the device loses power.
The mode register has three fields;
Options
:
A11 through A7, BA0, BA1
/CAS latency
:
A6 through A4
Wrap type
:
A3
Burst length
:
A2 through A0
Following mode register programming, no command can be issued before at least 2 CLK have elapsed.
/CAS Latency
/CAS latency is the most critical of the parameters being set. It tells the device how many clocks must elapse before
the data will be available. The value is determined by the frequency of the clock and the speed grade of the device.
”Relationship between Frequency and Latency” shows the relationship of /CAS latency to the clock period and the
speed grade of the device.
Burst Length
Burst Length is the number of words that will be output or input in a read or write cycle. After a read burst is
completed, the output bus will become High-Z. The burst length is programmable as 1, 2, 4, 8 or full page.
Wrap Type (Burst Sequence)
The wrap type specifies the order in which the burst data will be addressed.
This order is programmable as either
“Sequential” or “Interleave”. The method chosen will depend on the type of CPU in the system.
Some microprocessor cache systems are optimized for sequential addressing and others for interleaved addressing.
“Burst Length Sequence” shows the addressing sequence for each burst length using them. Both sequences
support bursts of 1, 2, 4 and 8. Additionally, sequence supports the full page length.
相關(guān)PDF資料
PDF描述
EDS1232AASE-60L-E Circular Connector; No. of Contacts:6; Series:; Body Material:Aluminum Alloy; Connecting Termination:Solder; Connector Shell Size:20; Circular Contact Gender:Socket; Circular Shell Style:Cable Receptacle; Insert Arrangement:20-17 RoHS Compliant: No
EDS1232AASE-75-E ER 6C 3#16 3#8 SKT RECP
EDS1232AASE-75L-E ER 2C 2#8 SKT RECP LINE
EDS1232CABB-1AL-E 128M bits SDRAM
EDS1232AABB-75L-E 128M bits SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EDS1232AASE-60L-E 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:128M bits SDRAM (4M words x 32 bits)
EDS1232AASE-75-E 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:128M bits SDRAM (4M words x 32 bits)
EDS1232AASE-75L-E 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:128M bits SDRAM (4M words x 32 bits)
EDS1232AATA 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:128M bits SDRAM
EDS1232AATA-60 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:128M bits SDRAM (4M words x 32 bits)
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