參數(shù)資料
型號(hào)： EDL1216CASA-10
英文描述： Programmable VCOM; Temperature Range: -40°C to 85°C; Package: 24-QFN
中文描述： 內(nèi)存| 4X2MX16 |的CMOS | BGA封裝| 54PIN |塑料
文件頁(yè)數(shù)： 3/59頁(yè)
文件大?。?/td> 489K
代理商： EDL1216CASA-10
EDL1216AASA
Data Sheet E0196E20 (Ver. 2.0)
11
Precharge command (/CS, /RAS, /WE = Low, /CAS = High)
This command begins precharge operation of the bank selected by BA0 (A13) and BA1(A12). When A10 is High, all
banks are precharged, regardless of BA0 (A13) and BA1 (A12). When A10 is Low, only the bank selected by BA0
(A13) and BA1 (A12) is precharged. After this command, the Mobile RAM can’t accept the activate command to the
precharging bank during tRP (precharge to activate command period). This command corresponds to a conventional
DRAM’s /RAS rising.
/WE
/CAS
/RAS
/CS
CKE
CLK
H
Add
A10
BA0(A13), BA1(A12)
(Precharge select)
Precharge command
Write command (/CS, /CAS, /WE = Low, /RAS = High)
This command sets the burst start address given by the column address to begin the burst write operation. The first
write data in burst mode can input with this command with subsequent data on following clocks.
/WE
/CAS
/RAS
/CS
CKE
CLK
H
Add
A10
BA0(A13), BA1(A12)
Col.
Write command
Read command (/CS, /CAS = Low, /RAS, /WE = High)
Read data is available after /CAS latency requirements have been met. This command sets the burst start address
given by the column address.
/WE
/CAS
/RAS
/CS
CKE
CLK
H
Add
A10
BA0(A13), BA1(A12)
Col.
Read command
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