參數(shù)資料
型號: EDL1216AASA-75
英文描述: Programmable VCOM; Temperature Range: -40°C to 85°C; Package: 12-DFN T&R
中文描述: 內(nèi)存| 4X2MX16 |的CMOS | BGA封裝| 54PIN |塑料
文件頁數(shù): 5/59頁
文件大?。?/td> 489K
代理商: EDL1216AASA-75
EDL1216AASA
Data Sheet E0196E20 (Ver. 2.0)
13
Deep power down entry command( /CS, CKE, /WE = Low, /RAS, /CAS = High)
After the command execution, deep power down mode continues while CKE remains low. When CKE goes high, the
Mobile RAM exits the deep power down mode. Before executing deep power down, all banks must be precharged.
/WE
/CAS
/RAS
/CS
CKE
CLK
Add
A10
BA0(A13), BA1(A12)
Deep power down entry command
Burst stop command (/CS = /WE = Low, /RAS, /CAS = High)
This command can stop the current burst operation.
/WE
/CAS
/RAS
/CS
CKE
CLK
Add
A10
BA0(A13), BA1(A12)
H
Burst stop command
No operation (/CS = Low, /RAS, /CAS, /WE = High)
This command is not an execution command. No operations begin or terminate by this command.
/WE
/CAS
/RAS
/CS
CKE
CLK
H
Add
A10
BA0(A13), BA1(A12)
No operation
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